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This article is cited in 1 scientific paper (total in 1 paper)
A hybrid mid-IR photodetector based on semiconductor quantum wells
V. S. Krivoboka, A. D. Kondorskiya, D. A. Pashkeevb, E. A. Ekimovac, A. D. Shabrinb, D. A. Litvinova, L. N. Grigor'evaad, S. A. Kolosova, M. A. Chernopitskiia, A. V. Klekovkina, P. A. Forshe a P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow
b ORION Research and Production Enterprise, Moscow, Russia
c Institute for High Pressure Physics, Russian Academy of Sciences
d Lomonosov Moscow State University
e National Research Centre "Kurchatov Institute", Moscow
Abstract:
We propose a hybrid photodetector device in which the interaction of an electromagnetic field with an electron subsystem of quantum wells is increased by the presence of SiC nanoparticles. Based on direct measurements of photoconductivity in the mid-IR range and numerical calculations using finite-difference time-domain method, it is shown that the proposed approach can increase the sensitivity of photodetector to electromagnetic radiation due to rotation of the polarization direction, including that in the near field of SiC nanoparticles.
Keywords:
IR detector, quantum well, phonon polariton, SiC.
Received: 15.12.2020 Revised: 15.12.2020 Accepted: 14.01.2021
Citation:
V. S. Krivobok, A. D. Kondorskiy, D. A. Pashkeev, E. A. Ekimov, A. D. Shabrin, D. A. Litvinov, L. N. Grigor'eva, S. A. Kolosov, M. A. Chernopitskii, A. V. Klekovkin, P. A. Forsh, “A hybrid mid-IR photodetector based on semiconductor quantum wells”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:8 (2021), 33–36; Tech. Phys. Lett., 47:5 (2021), 388–391
Linking options:
https://www.mathnet.ru/eng/pjtf6564 https://www.mathnet.ru/eng/pjtf/v47/i8/p33
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