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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 42, Issue 1, Pages 65–71
(Mi pjtf6550)
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This article is cited in 8 scientific papers (total in 8 papers)
Modification of the properties of vanadium dioxide by plasma-immersion ion implantation
S. V. Burdyukh, G. B. Stefanovich, A. L. Pergament, O. Ya. Berezina, N. A. Avdeev, A. B. Cheremisin Petrozavodsk State University
Abstract:
The effect of hydrogenation of thin films of vanadium dioxide by plasma-immersion ion implantation on their conductivity is characterized. It is demonstrated that the parameters of the metal–insulator phase transition observed in VO$_2$ films depend on the irradiation dose. If the dose exceeds a certain threshold, film metallization occurs and the phase transition vanishes. The time of retention of hydrogen within films is considerably longer than that typical for other hydrogenation methods.
Keywords:
Technical Physic Letter, Pulse Repetition Rate, Vanadium Dioxide, Insulator Phase Transition, System High Voltage.
Received: 24.08.2015
Citation:
S. V. Burdyukh, G. B. Stefanovich, A. L. Pergament, O. Ya. Berezina, N. A. Avdeev, A. B. Cheremisin, “Modification of the properties of vanadium dioxide by plasma-immersion ion implantation”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:1 (2016), 65–71; Tech. Phys. Lett., 42:1 (2016), 32–35
Linking options:
https://www.mathnet.ru/eng/pjtf6550 https://www.mathnet.ru/eng/pjtf/v42/i1/p65
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Abstract page: | 33 | Full-text PDF : | 7 |
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