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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 42, Issue 7, Pages 90–97
(Mi pjtf6463)
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This article is cited in 14 scientific papers (total in 14 papers)
A microwave cryogenic low-noise amplifier based on sige heterostructures
B. I. Ivanova, M. Grajcarbc, I. L. Novikova, A. G. Vostretsova, E. Il'ichevad a Novosibirsk State Technical University
b Department of Experimental Physics, Comenius University, Bratislava
c Institute of Physics, Slovak Academy of Sciences
d Leibniz Institute of Photonic Technology, Germany
Abstract:
A low-noise cryogenic amplifier for the measurement of weak microwave signals at sub-Kelvin temperatures is constructed. The amplifier has five stages based on SiGe bipolar heterostructure transistors and has a gain factor of 35 dB in the frequency band from 100 MHz to 4 GHz at an operating temperature of 800 mK. The parameters of a superconducting quantum bit measured with this amplifier in the ultralow-power mode are presented as an application example. The amplitude–frequency response of the “supercon-ducting qubit–coplanar cavity” structure is demonstrated. The ground state of the qubit is characterized in the quasi-dispersive measurement mode.
Keywords:
Technical Physic Letter, Gain Factor, Microwave Theory Tech, Input Power Level, Superconducting Qubit.
Received: 20.11.2015
Citation:
B. I. Ivanov, M. Grajcar, I. L. Novikov, A. G. Vostretsov, E. Il'ichev, “A microwave cryogenic low-noise amplifier based on sige heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:7 (2016), 90–97; Tech. Phys. Lett., 42:4 (2016), 380–383
Linking options:
https://www.mathnet.ru/eng/pjtf6463 https://www.mathnet.ru/eng/pjtf/v42/i7/p90
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