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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 42, Issue 7, Pages 10–16
(Mi pjtf6452)
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This article is cited in 4 scientific papers (total in 4 papers)
Photoluminescence of Ta$_{2}$O$_{5}$ films formed by the molecular layer deposition method
A. P. Baraban, V. A. Dmitriev, V. A. Prokof’ev, V. E. Drozd, E. O. Filatova Saint Petersburg State University
Abstract:
Ta$_{2}$O$_{5}$ films of different thicknesses (20–100 nm) synthesized by the molecular layer deposition method on p-type silicon substrates and thermally oxidized silicon substrates have been studied by the methods of high-frequency capacitance–voltage characteristics and photoluminescence. A hole-conduction channel is found to form in the Si–Ta$_{2}$O$_{5}$–field electrode system. A model of the electronic structure of Ta$_{2}$O$_{5}$ films is proposed based on an analysis of the measured PL spectra and performed electrical investigations.
Keywords:
Technical Physic Letter, Dynamic Random Access Memory, Tantalum Pentoxide, Oxidize Silicon Substrate, Ta$_{2}$O$_{5}$ Film.
Received: 17.09.2015
Citation:
A. P. Baraban, V. A. Dmitriev, V. A. Prokof’ev, V. E. Drozd, E. O. Filatova, “Photoluminescence of Ta$_{2}$O$_{5}$ films formed by the molecular layer deposition method”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:7 (2016), 10–16; Tech. Phys. Lett., 42:4 (2016), 341–343
Linking options:
https://www.mathnet.ru/eng/pjtf6452 https://www.mathnet.ru/eng/pjtf/v42/i7/p10
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