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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 42, Issue 8, Pages 53–60
(Mi pjtf6444)
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This article is cited in 6 scientific papers (total in 6 papers)
Low-temperature diffusion of implanted sodium in silicon
A. V. Zastavnoi, V. M. Korol' Research Institute of Physics, Southern Federal University, Rostov-on-Don
Abstract:
We have studied the low-temperature diffusion of sodium atoms implanted (at primary ion energy $E$ = 300 keV to total doses within $\Phi$ = 5 $\times$ 10$^{14}$–3 $\cdot$ 10$^{15}$ cm$^{-2}$) in single-crystalline silicon grown by the method of float-zone melting (fz-Si) with low oxygen concentration $N_{\mathrm{O}}$ and by the Czochralski method in the presence of magnetic field ($m$Cz-$n$-Si and $m$Cz-$p$-Si) with $N_{\mathrm{O}}\approx$ 5 $\times$ 10$^{17}$ cm$^{-3}$. The diffusion was studied at annealing temperatures within $T_{\mathrm{ann}}$ = 500–420$^\circ$C for periods of time $t_{\mathrm{ann}}$ = 72–1000 h. It is established that the temperature dependence of the diffusion coefficient $D(10^{3}/T)$ of sodium in fz-Si in a broad range of $T_{\mathrm{ann}}$ = 900–420$^\circ$C obeys the Arrhenius law with $E_{\mathrm{fz}}$ = 1.28 eV and $D_{0}$ = 1.4 $\cdot$ 10$^{-2}$ cm$^{2}$/s. The same parameters are valid for the implanted sodium diffusion in $m$Cz-Si in the interval of $T_{\mathrm{ann}}$ = 900–700$^\circ$C. However, at lower temperatures, the values of $D$ in $m$Cz-Si are lower than to those in fz-Si, which is related to the formation of more complicated Na–O$_{n}$ ($n>$ 1) complexes in the former case. Estimation of the diffusion activation energy of these complexes yields $\Delta E\approx$ 2.3 eV.
Keywords:
Technical Physic Letter, Effective Diffusion Coefficient, Sodium Atom, Czochralski Method, Diffusion Spreading.
Received: 29.09.2015
Citation:
A. V. Zastavnoi, V. M. Korol', “Low-temperature diffusion of implanted sodium in silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:8 (2016), 53–60; Tech. Phys. Lett., 42:4 (2016), 415–418
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https://www.mathnet.ru/eng/pjtf6444 https://www.mathnet.ru/eng/pjtf/v42/i8/p53
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