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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 42, Issue 9, Pages 56–63 (Mi pjtf6431)  
Determination of topological parameters of a laser with passive mode-locking on the basis of InGaAlAs/InGaAs/InP heterostructures

G. A. Mikhailovskii, I. S. Polukhin, D. A. Rybalko, Yu. V. Solov’ev, M. A. Odnoblyudov

Peter the Great St. Petersburg Polytechnic University
Full-text PDF (138 kB)
Abstract: Topological parameters of a strip-geometry laser with passive mode-locking on the basis of an InGaAlAs/InGaAs/InP heterostructure are determined from the condition for the existence of one transverse mode in a strip waveguide. The strip width was 1.5 $\mu$m, the mesa etch depth was 1.32 $\mu$m, and the thickness of the dielectric layer was 0.36 $\mu$m.
Received: 01.12.2015
English version:
Technical Physics Letters, 2016, Volume 42, Issue 5, Pages 471–474
DOI: https://doi.org/10.1134/S1063785016050114
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: G. A. Mikhailovskii, I. S. Polukhin, D. A. Rybalko, Yu. V. Solov’ev, M. A. Odnoblyudov, “Determination of topological parameters of a laser with passive mode-locking on the basis of InGaAlAs/InGaAs/InP heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:9 (2016), 56–63; Tech. Phys. Lett., 42:5 (2016), 471–474
Citation in format AMSBIB
\Bibitem{MikPolRyb16}
\by G.~A.~Mikhailovskii, I.~S.~Polukhin, D.~A.~Rybalko, Yu.~V.~Solov’ev, M.~A.~Odnoblyudov
\paper Determination of topological parameters of a laser with passive mode-locking on the basis of InGaAlAs/InGaAs/InP heterostructures
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2016
\vol 42
\issue 9
\pages 56--63
\mathnet{http://mi.mathnet.ru/pjtf6431}
\elib{https://elibrary.ru/item.asp?id=27368193}
\transl
\jour Tech. Phys. Lett.
\yr 2016
\vol 42
\issue 5
\pages 471--474
\crossref{https://doi.org/10.1134/S1063785016050114}
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