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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 42, Issue 13, Pages 18–25
(Mi pjtf6368)
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This article is cited in 3 scientific papers (total in 3 papers)
Field effect in a graphene oxide transistor for proton and electron–hole conductivities
V. A. Smirnova, A. D. Mokrushinb, V. P. Vasil’eva, N. N. Denisova, K. N. Denisovac a Institute of Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka, Moscow region
b Institute of Microelectronics Technology and High-Purity Materials RAS
c Lomonosov Moscow State University
Abstract:
Proton (wet atmosphere) and electron (reduced graphene oxide) conductivities can be observed in graphene oxide films. The field effect in a graphene oxide transistor for different conductivity types has been discovered and investigated.
Received: 08.02.2016
Citation:
V. A. Smirnov, A. D. Mokrushin, V. P. Vasil’ev, N. N. Denisov, K. N. Denisova, “Field effect in a graphene oxide transistor for proton and electron–hole conductivities”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:13 (2016), 18–25; Tech. Phys. Lett., 42:7 (2016), 671–673
Linking options:
https://www.mathnet.ru/eng/pjtf6368 https://www.mathnet.ru/eng/pjtf/v42/i13/p18
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Statistics & downloads: |
Abstract page: | 27 | Full-text PDF : | 6 |
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