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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 42, Issue 14, Pages 66–71
(Mi pjtf6360)
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This article is cited in 1 scientific paper (total in 1 paper)
Growing InAs/GaAs quantum dots by droplet epitaxy under MOVPE conditions
M. A. Surninaa, R. Kh. Akchurina, A. A. Marmalyukbc, T. A. Bagaevc, A. L. Sizovd a Institute of fine chemical technologies named after M.V. Lomonosov
b National Engineering Physics Institute "MEPhI", Moscow
c "Sigm Plyus" Ltd., Moscow
d Scientific Production Association "Orion", Moscow
Abstract:
Results of studying the formation of InAs quantum dots (QDs) on GaAs(100) substrates by droplet epitaxy using trimethylindium and arsine (AsH$_3$) as precursors are presented. The growth process was carried out at temperatures within 230–400$^\circ$C in a horizontal reactor for metalorganic vapor phase epitaxy (MOVPE) using high-purity hydrogen as the carrier gas. Data on the influence of process temperature on the QD size and the density of QD array and results of investigation of the low-temperature photoluminescence of obtained samples are presented.
Received: 04.03.2016
Citation:
M. A. Surnina, R. Kh. Akchurin, A. A. Marmalyuk, T. A. Bagaev, A. L. Sizov, “Growing InAs/GaAs quantum dots by droplet epitaxy under MOVPE conditions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:14 (2016), 66–71; Tech. Phys. Lett., 42:7 (2016), 747–749
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https://www.mathnet.ru/eng/pjtf6360 https://www.mathnet.ru/eng/pjtf/v42/i14/p66
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Abstract page: | 42 | Full-text PDF : | 8 |
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