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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 42, Issue 14, Pages 66–71 (Mi pjtf6360)  
This article is cited in 1 scientific paper (total in 1 paper)

Growing InAs/GaAs quantum dots by droplet epitaxy under MOVPE conditions

M. A. Surninaa, R. Kh. Akchurina, A. A. Marmalyukbc, T. A. Bagaevc, A. L. Sizovd

a Institute of fine chemical technologies named after M.V. Lomonosov
b National Engineering Physics Institute "MEPhI", Moscow
c "Sigm Plyus" Ltd., Moscow
d Scientific Production Association "Orion", Moscow
Full-text PDF (363 kB) Citations (1)
Abstract: Results of studying the formation of InAs quantum dots (QDs) on GaAs(100) substrates by droplet epitaxy using trimethylindium and arsine (AsH$_3$) as precursors are presented. The growth process was carried out at temperatures within 230–400$^\circ$C in a horizontal reactor for metalorganic vapor phase epitaxy (MOVPE) using high-purity hydrogen as the carrier gas. Data on the influence of process temperature on the QD size and the density of QD array and results of investigation of the low-temperature photoluminescence of obtained samples are presented.
Received: 04.03.2016
English version:
Technical Physics Letters, 2016, Volume 42, Issue 7, Pages 747–749
DOI: https://doi.org/10.1134/S1063785016070294
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. A. Surnina, R. Kh. Akchurin, A. A. Marmalyuk, T. A. Bagaev, A. L. Sizov, “Growing InAs/GaAs quantum dots by droplet epitaxy under MOVPE conditions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:14 (2016), 66–71; Tech. Phys. Lett., 42:7 (2016), 747–749
Citation in format AMSBIB
\Bibitem{SurAkcMar16}
\by M.~A.~Surnina, R.~Kh.~Akchurin, A.~A.~Marmalyuk, T.~A.~Bagaev, A.~L.~Sizov
\paper Growing InAs/GaAs quantum dots by droplet epitaxy under MOVPE conditions
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2016
\vol 42
\issue 14
\pages 66--71
\mathnet{http://mi.mathnet.ru/pjtf6360}
\elib{https://elibrary.ru/item.asp?id=27368267}
\transl
\jour Tech. Phys. Lett.
\yr 2016
\vol 42
\issue 7
\pages 747--749
\crossref{https://doi.org/10.1134/S1063785016070294}
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    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
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