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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 42, Issue 14, Pages 1–6
(Mi pjtf6351)
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This article is cited in 3 scientific papers (total in 3 papers)
Production technology and optical absorption characteristics of CuIn$_{0.95}$Ga$_{0.05}$Se$_{2}$ semiconductor solid solution films
M. А. Alieva, S. N. Kallaeva, T. M. Gadzhieva, R. M. Gadzhievaa, A. M. Ismailovb, B. A. Bilalovc a Daghestan Institute of Physics after Amirkhanov, Makhachkala, Dagestan, Russia
b Daghestan State University, Makhachkala
c Daghestan State Technical University
Abstract:
A production technology of thin CuIn$_{0.95}$Ga$_{0.05}$Se$_{2}$ films has been developed based on the method of two-stage selenization of CuIn$_{0.95}$Ga$_{0.05}$Se$_{2}$ precursor by a reactive component (selenium) in a carrier gas (nitrogen) flow. The morphology and structure of obtained films were studied by electron microscopy and X-ray diffraction techniques. The spectral dependence of the optical absorption coefficient was measured.
Received: 04.01.2016
Citation:
M. А. Aliev, S. N. Kallaev, T. M. Gadzhiev, R. M. Gadzhieva, A. M. Ismailov, B. A. Bilalov, “Production technology and optical absorption characteristics of CuIn$_{0.95}$Ga$_{0.05}$Se$_{2}$ semiconductor solid solution films”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:14 (2016), 1–6; Tech. Phys. Lett., 42:7 (2016), 715–717
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https://www.mathnet.ru/eng/pjtf6351 https://www.mathnet.ru/eng/pjtf/v42/i14/p1
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Abstract page: | 47 | Full-text PDF : | 16 |
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