Pisma v Zhurnal Tekhnicheskoi Fiziki
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Guidelines for authors

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Pisma v Zhurnal Tekhnicheskoi Fiziki:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 42, Issue 15, Pages 36–42 (Mi pjtf6341)  
This article is cited in 3 scientific papers (total in 3 papers)

Crystallization of amorphous hydrogenated silicon ($a$-Si:H) films under irradiation with femtosecond laser pulses

V. P. Belika, O. S. Vasutinskiia, A. V. Kukina, M. A. Petrovab, R. S. Popovab, E. I. Terukovac

a Ioffe Institute, St. Petersburg
b Peter the Great St. Petersburg Polytechnic University
c R&D Center TFTE, St.-Petersburg
Full-text PDF (989 kB) Citations (3)
Abstract: Crystallization of thin films of amorphous hydrogenated silicon under the irradiation of femtosecond laser pulses has been studied. It was found that the crystallization has a clearly pronounced threshold nature and depends on the laser emission wavelength. As shown the best results are achieved in crystallization at the laser wavelength range of 740–760 nm.
Received: 23.03.2016
English version:
Technical Physics Letters, 2016, Volume 42, Issue 8, Pages 788–791
DOI: https://doi.org/10.1134/S1063785016080058
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. P. Belik, O. S. Vasutinskii, A. V. Kukin, M. A. Petrov, R. S. Popov, E. I. Terukov, “Crystallization of amorphous hydrogenated silicon ($a$-Si:H) films under irradiation with femtosecond laser pulses”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:15 (2016), 36–42; Tech. Phys. Lett., 42:8 (2016), 788–791
Citation in format AMSBIB
\Bibitem{BelVasKuk16}
\by V.~P.~Belik, O.~S.~Vasutinskii, A.~V.~Kukin, M.~A.~Petrov, R.~S.~Popov, E.~I.~Terukov
\paper Crystallization of amorphous hydrogenated silicon ($a$-Si:H) films under irradiation with femtosecond laser pulses
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2016
\vol 42
\issue 15
\pages 36--42
\mathnet{http://mi.mathnet.ru/pjtf6341}
\elib{https://elibrary.ru/item.asp?id=27368278}
\transl
\jour Tech. Phys. Lett.
\yr 2016
\vol 42
\issue 8
\pages 788--791
\crossref{https://doi.org/10.1134/S1063785016080058}
Linking options:
  • https://www.mathnet.ru/eng/pjtf6341
  • https://www.mathnet.ru/eng/pjtf/v42/i15/p36
    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
    Statistics & downloads:
    Abstract page:38
    Full-text PDF :9
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024