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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 42, Issue 15, Pages 19–26 (Mi pjtf6339)  
Electron heat conductivity of epitaxial graphene on silicon carbide

Z. Z. Alisultanovabc, R. P. Meylanovd

a Daghestan Institute of Physics after Amirkhanov, Makhachkala, Dagestan, Russia
b Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow
c Daghestan State University, Makhachkala
d Institute of Geothermy Problems, Makhachkala
Full-text PDF (132 kB)
Abstract: The diagonal component of the electron heat conductivity tensor of epitaxial graphene formed in a semiconductor has been investigated within a simple analytical model. It is shown that the heat conductivity sharply changes at a chemical potential close to the substrate band gap edge. Low-temperature expressions for the heat conductivity are derived.
Received: 20.10.2015
English version:
Technical Physics Letters, 2016, Volume 42, Issue 8, Pages 779–782
DOI: https://doi.org/10.1134/S1063785016080022
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: Z. Z. Alisultanov, R. P. Meylanov, “Electron heat conductivity of epitaxial graphene on silicon carbide”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:15 (2016), 19–26; Tech. Phys. Lett., 42:8 (2016), 779–782
Citation in format AMSBIB
\Bibitem{AliMey16}
\by Z.~Z.~Alisultanov, R.~P.~Meylanov
\paper Electron heat conductivity of epitaxial graphene on silicon carbide
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2016
\vol 42
\issue 15
\pages 19--26
\mathnet{http://mi.mathnet.ru/pjtf6339}
\elib{https://elibrary.ru/item.asp?id=27368276}
\transl
\jour Tech. Phys. Lett.
\yr 2016
\vol 42
\issue 8
\pages 779--782
\crossref{https://doi.org/10.1134/S1063785016080022}
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