|
Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 42, Issue 19, Pages 55–61
(Mi pjtf6292)
|
|
|
|
Photoluminescence at the fundamental absorption edge of single-crystal silicon textured without masking
A. M. Emel'yanova, S. N. Abolmasovb, E. I. Terukovab a Ioffe Institute, St. Petersburg
b R&D Center TFTE, St.-Petersburg
Abstract:
The extraction efficiencies of edge luminescence from single-crystal silicon have been compared for three structures: textured without masking, untextured, and textured with masking by the technology of high-efficiency solar cells. The highest efficiency was obtained for the structure textured without masking. For this structure, the efficiency of power conversion at a wavelength of $\sim$0.66 $\mu$m and power of 75 mW into edge PL power emerging from the semiconductor was $\eta\approx$ 0.8% under the nonradiative recombination conditions described by the exponential photoluminescence (PL) decay time constant of $\sim$0.11 ms. The directivity diagrams of the edge PL were measured for the three structures under study.
Received: 04.03.2016
Citation:
A. M. Emel'yanov, S. N. Abolmasov, E. I. Terukov, “Photoluminescence at the fundamental absorption edge of single-crystal silicon textured without masking”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:19 (2016), 55–61; Tech. Phys. Lett., 42:10 (2016), 1002–1004
Linking options:
https://www.mathnet.ru/eng/pjtf6292 https://www.mathnet.ru/eng/pjtf/v42/i19/p55
|
Statistics & downloads: |
Abstract page: | 25 | Full-text PDF : | 5 |
|