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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 42, Issue 20, Pages 33–39
(Mi pjtf6278)
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This article is cited in 9 scientific papers (total in 9 papers)
Metamorphic InAs/InGaAs/InAlAs quantum wells with submonolayer InSb insertions emitted in the mid-infrared spectral range
V. A. Solov'eva, M. Yu. Chernova, B. Ya. Mel'tsera, A. N. Semenova, Ya. V. Terent'eva, D. D. Firsovb, O. S. Komkovb, S. V. Ivanova a Ioffe Institute, St. Petersburg
b Saint Petersburg Electrotechnical University "LETI"
Abstract:
Metamorphic InAs/InGaAs/InAlAs quantum wells with submonolayer InSb insertions have been grown for the first time by molecular beam epitaxy on GaAs (001) substrates using a graded InAlAs buffer layer with increasing In composition. The given nanoheterostructures demonstrate an intense photoluminescence at a wavelength of over of over 3 $\mu$m (80 K), which is shifted toward longer wavelengths as compared with that of the structures without InSb insertions.
Received: 01.06.2016
Citation:
V. A. Solov'ev, M. Yu. Chernov, B. Ya. Mel'tser, A. N. Semenov, Ya. V. Terent'ev, D. D. Firsov, O. S. Komkov, S. V. Ivanov, “Metamorphic InAs/InGaAs/InAlAs quantum wells with submonolayer InSb insertions emitted in the mid-infrared spectral range”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:20 (2016), 33–39; Tech. Phys. Lett., 42:10 (2016), 1038–1040
Linking options:
https://www.mathnet.ru/eng/pjtf6278 https://www.mathnet.ru/eng/pjtf/v42/i20/p33
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Abstract page: | 45 | Full-text PDF : | 17 |
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