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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 42, Issue 20, Pages 18–23 (Mi pjtf6276)  
Terahertz emission at impurity electrical breakdown in Si(Li)

A. V. Andrianova, A. O. Zahar'ina, R. Kh. Zhukavinb, V. N. Shastinbc, D. V. Shengurovb, N. V. Abrosimovd

a Ioffe Institute, St. Petersburg
b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
c Lobachevsky State University of Nizhny Novgorod
d Leibniz Institute for Crystal Growth, Berlin, Germany
Full-text PDF (163 kB)
Abstract: Terahertz electroluminescence caused by impurity-induced breakdown in lithium-doped silicon crystals is studied. The spectrum of the terahertz emission exhibits lines corresponding to intracenter electronic transitions between excited states of the impurity and sublevels of the ground state of the lithium donor. The spectrum also shows a background signal, which, apparently, is a manifestation of the effects due to heating at electric excitation.
Received: 31.05.2016
English version:
Technical Physics Letters, 2016, Volume 42, Issue 10, Pages 1031–1033
DOI: https://doi.org/10.1134/S1063785016100163
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. V. Andrianov, A. O. Zahar'in, R. Kh. Zhukavin, V. N. Shastin, D. V. Shengurov, N. V. Abrosimov, “Terahertz emission at impurity electrical breakdown in Si(Li)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:20 (2016), 18–23; Tech. Phys. Lett., 42:10 (2016), 1031–1033
Citation in format AMSBIB
\Bibitem{AndZahZhu16}
\by A.~V.~Andrianov, A.~O.~Zahar'in, R.~Kh.~Zhukavin, V.~N.~Shastin, D.~V.~Shengurov, N.~V.~Abrosimov
\paper Terahertz emission at impurity electrical breakdown in Si(Li)
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2016
\vol 42
\issue 20
\pages 18--23
\mathnet{http://mi.mathnet.ru/pjtf6276}
\elib{https://elibrary.ru/item.asp?id=27368343}
\transl
\jour Tech. Phys. Lett.
\yr 2016
\vol 42
\issue 10
\pages 1031--1033
\crossref{https://doi.org/10.1134/S1063785016100163}
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