|
Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 42, Issue 21, Pages 32–38
(Mi pjtf6267)
|
|
|
|
This article is cited in 4 scientific papers (total in 4 papers)
Amorphous carbon buffer layers for separating free gallium nitride films
A. Altakhova, R. I. Gorbunovb, L. A. Kasharinaa, F. E. Latyshevc, V. A. Taralaa, Yu. G. Shreterb a North-Caucasus Federal University
b Ioffe Institute, St. Petersburg
c NTS, St. Petersburg, Russia
Abstract:
The possibility of using amorphous diamond-like carbon (DLC) films for self-separation of gallium nitride (GaN) layers grown by hydride vapor-phase epitaxy has been analyzed. DLC films have been synthesized by plasma-enhanced chemical vapor deposition under low pressure on sapphire (Al$_{2}$O$_{3}$) substrates with a (0001) crystallographic orientation. The samples have been studied by the methods of Raman scattering and X-ray diffraction analysis. It is shown that thin DLC films affect only slightly the processes of nucleation and growth of gallium nitride films. Notably, the strength of the "GaN film–Al$_{2}$O$_{3}$" substrate interface decreases, which facilitates separation of the GaN layers.
Received: 07.06.2016
Citation:
A. Altakhov, R. I. Gorbunov, L. A. Kasharina, F. E. Latyshev, V. A. Tarala, Yu. G. Shreter, “Amorphous carbon buffer layers for separating free gallium nitride films”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:21 (2016), 32–38; Tech. Phys. Lett., 42:11 (2016), 1076–1078
Linking options:
https://www.mathnet.ru/eng/pjtf6267 https://www.mathnet.ru/eng/pjtf/v42/i21/p32
|
Statistics & downloads: |
Abstract page: | 31 | Full-text PDF : | 13 |
|