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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 42, Issue 21, Pages 1–8 (Mi pjtf6263)  

This article is cited in 5 scientific papers (total in 5 papers)

Microwave power amplifiers based on AlGaN/GaN transistors with a two-dimensional electron gas

O. G. Vendika, I. B. Vendika, P. A. Tural’chuka, Ya. M. Parnesa, M. D. Parnesb

a Saint Petersburg Electrotechnical University "LETI"
b OOO Rezonans, St. Petersburg
Full-text PDF (301 kB) Citations (5)
Abstract: A technique for synthesis of microwave power amplifiers based on transistors with a AlGaN/GaN heterojunction is discussed. Special focus is on the development of a technique for synthesis of transformation circuits of the power amplifier to increase efficiency with a retained high output power. The use of independent matching at the harmonic frequencies and fundamental frequency makes it possible to control the attainable efficiency in a wide frequency band along with the total suppression of harmonics beyond the operational band. Microwave power amplifiers for operation at 4 and 9 GHz have been developed and experimentally investigated.
Received: 10.03.2016
English version:
Technical Physics Letters, 2016, Volume 42, Issue 11, Pages 1061–1063
DOI: https://doi.org/10.1134/S1063785016110110
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: O. G. Vendik, I. B. Vendik, P. A. Tural’chuk, Ya. M. Parnes, M. D. Parnes, “Microwave power amplifiers based on AlGaN/GaN transistors with a two-dimensional electron gas”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:21 (2016), 1–8; Tech. Phys. Lett., 42:11 (2016), 1061–1063
Citation in format AMSBIB
\Bibitem{VenVenTur16}
\by O.~G.~Vendik, I.~B.~Vendik, P.~A.~Tural’chuk, Ya.~M.~Parnes, M.~D.~Parnes
\paper Microwave power amplifiers based on AlGaN/GaN transistors with a two-dimensional electron gas
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2016
\vol 42
\issue 21
\pages 1--8
\mathnet{http://mi.mathnet.ru/pjtf6263}
\elib{https://elibrary.ru/item.asp?id=27368351}
\transl
\jour Tech. Phys. Lett.
\yr 2016
\vol 42
\issue 11
\pages 1061--1063
\crossref{https://doi.org/10.1134/S1063785016110110}
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  • https://www.mathnet.ru/eng/pjtf/v42/i21/p1
  • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
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