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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 42, Issue 21, Pages 1–8
(Mi pjtf6263)
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This article is cited in 5 scientific papers (total in 5 papers)
Microwave power amplifiers based on AlGaN/GaN transistors with a two-dimensional electron gas
O. G. Vendika, I. B. Vendika, P. A. Tural’chuka, Ya. M. Parnesa, M. D. Parnesb a Saint Petersburg Electrotechnical University "LETI"
b OOO Rezonans, St. Petersburg
Abstract:
A technique for synthesis of microwave power amplifiers based on transistors with a AlGaN/GaN heterojunction is discussed. Special focus is on the development of a technique for synthesis of transformation circuits of the power amplifier to increase efficiency with a retained high output power. The use of independent matching at the harmonic frequencies and fundamental frequency makes it possible to control the attainable efficiency in a wide frequency band along with the total suppression of harmonics beyond the operational band. Microwave power amplifiers for operation at 4 and 9 GHz have been developed and experimentally investigated.
Received: 10.03.2016
Citation:
O. G. Vendik, I. B. Vendik, P. A. Tural’chuk, Ya. M. Parnes, M. D. Parnes, “Microwave power amplifiers based on AlGaN/GaN transistors with a two-dimensional electron gas”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:21 (2016), 1–8; Tech. Phys. Lett., 42:11 (2016), 1061–1063
Linking options:
https://www.mathnet.ru/eng/pjtf6263 https://www.mathnet.ru/eng/pjtf/v42/i21/p1
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Abstract page: | 37 | Full-text PDF : | 9 |
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