Pisma v Zhurnal Tekhnicheskoi Fiziki
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Guidelines for authors

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Pisma v Zhurnal Tekhnicheskoi Fiziki:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 42, Issue 22, Pages 16–22 (Mi pjtf6255)  
An investigation of current-flow mechanisms in thin rubrene wafers prepared by the vapor transport method

O. S. Talaricoa, V. V. Tregulovb, V. G. Litvinovc, A. V. Ermachikhinc

a P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow
b Ryazan State University S. A. Esenin
c Ryazan State Radio Engineering University
Full-text PDF (221 kB)
Abstract: Optical transmission spectrum and temperature dependence of the current–voltage characteristics of a plane-parallel rubrene wafer prepared by the vapor transport method have been investigated. The band gap is determined from the optical transmission spectrum. It is established that the current–voltage characteristics can be explained within the framework of the model of space-charge-limited currents. The current-flow processes are significantly affected by traps.
Received: 08.06.2016
English version:
Technical Physics Letters, 2016, Volume 42, Issue 11, Pages 1107–1109
DOI: https://doi.org/10.1134/S1063785016110213
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: O. S. Talarico, V. V. Tregulov, V. G. Litvinov, A. V. Ermachikhin, “An investigation of current-flow mechanisms in thin rubrene wafers prepared by the vapor transport method”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:22 (2016), 16–22; Tech. Phys. Lett., 42:11 (2016), 1107–1109
Citation in format AMSBIB
\Bibitem{TalTreLit16}
\by O.~S.~Talarico, V.~V.~Tregulov, V.~G.~Litvinov, A.~V.~Ermachikhin
\paper An investigation of current-flow mechanisms in thin rubrene wafers prepared by the vapor transport method
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2016
\vol 42
\issue 22
\pages 16--22
\mathnet{http://mi.mathnet.ru/pjtf6255}
\elib{https://elibrary.ru/item.asp?id=27368363}
\transl
\jour Tech. Phys. Lett.
\yr 2016
\vol 42
\issue 11
\pages 1107--1109
\crossref{https://doi.org/10.1134/S1063785016110213}
Linking options:
  • https://www.mathnet.ru/eng/pjtf6255
  • https://www.mathnet.ru/eng/pjtf/v42/i22/p16
    • Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
    Statistics & downloads:
    Abstract page:28
    Full-text PDF :8
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024