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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 42, Issue 22, Pages 16–22 (Mi pjtf6255)  
An investigation of current-flow mechanisms in thin rubrene wafers prepared by the vapor transport method

O. S. Talaricoa, V. V. Tregulovb, V. G. Litvinovc, A. V. Ermachikhinc

a P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow
b Ryazan State University S. A. Esenin
c Ryazan State Radio Engineering University
Full-text PDF (221 kB)
Abstract: Optical transmission spectrum and temperature dependence of the current–voltage characteristics of a plane-parallel rubrene wafer prepared by the vapor transport method have been investigated. The band gap is determined from the optical transmission spectrum. It is established that the current–voltage characteristics can be explained within the framework of the model of space-charge-limited currents. The current-flow processes are significantly affected by traps.
Received: 08.06.2016
English version:
Technical Physics Letters, 2016, Volume 42, Issue 11, Pages 1107–1109
DOI: https://doi.org/10.1134/S1063785016110213
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: O. S. Talarico, V. V. Tregulov, V. G. Litvinov, A. V. Ermachikhin, “An investigation of current-flow mechanisms in thin rubrene wafers prepared by the vapor transport method”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:22 (2016), 16–22; Tech. Phys. Lett., 42:11 (2016), 1107–1109
Citation in format AMSBIB
\Bibitem{TalTreLit16}
\by O.~S.~Talarico, V.~V.~Tregulov, V.~G.~Litvinov, A.~V.~Ermachikhin
\paper An investigation of current-flow mechanisms in thin rubrene wafers prepared by the vapor transport method
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2016
\vol 42
\issue 22
\pages 16--22
\mathnet{http://mi.mathnet.ru/pjtf6255}
\elib{https://elibrary.ru/item.asp?id=27368363}
\transl
\jour Tech. Phys. Lett.
\yr 2016
\vol 42
\issue 11
\pages 1107--1109
\crossref{https://doi.org/10.1134/S1063785016110213}
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