Pisma v Zhurnal Tekhnicheskoi Fiziki
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Guidelines for authors

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Pisma v Zhurnal Tekhnicheskoi Fiziki:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Pisma v Zhurnal Tekhnicheskoi Fiziki, 2017, Volume 43, Issue 20, Pages 3–11
DOI: https://doi.org/10.21883/PJTF.2017.20.45144.16896 (Mi pjtf6091) 		 
This article is cited in 1 scientific paper (total in 1 paper)

A study of the effect of random dopant-concentration fluctuations on current in semiconductor superlattices

A. Selskiiab, A. A. Koronovskiia, O. I. Moskalenkoa, A. E. Khramovb

a Saratov State University
b Yuri Gagarin State Technical University of Saratov
Full-text PDF (235 kB) Citations (1)
DOI: https://doi.org/10.21883/PJTF.2017.20.45144.16896
Abstract: The influence exerted by random dopant-concentration fluctuations on the current–voltage characteristics of the current flowing through a semiconductor superlattice has been studied. It was shown that the characteristics of the current flowing through the superlattice noticeably vary with the amplitude of fluctuations of nanostructure parameters. It was possible to find for a small sample the probability-density distribution of the integrated absolute values of the difference of currents at various amplitudes of the dopantconcentration fluctuations.
Received: 01.06.2017
English version:
Technical Physics Letters, 2017, Volume 43, Issue 10, Pages 912–915
DOI: https://doi.org/10.1134/S106378501710025X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. Selskii, A. A. Koronovskii, O. I. Moskalenko, A. E. Khramov, “A study of the effect of random dopant-concentration fluctuations on current in semiconductor superlattices”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:20 (2017), 3–11; Tech. Phys. Lett., 43:10 (2017), 912–915
Citation in format AMSBIB
\Bibitem{SelKorMos17}
\by A.~Selskii, A.~A.~Koronovskii, O.~I.~Moskalenko, A.~E.~Khramov
\paper A study of the effect of random dopant-concentration fluctuations on current in semiconductor superlattices
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2017
\vol 43
\issue 20
\pages 3--11
\mathnet{http://mi.mathnet.ru/pjtf6091}
\crossref{https://doi.org/10.21883/PJTF.2017.20.45144.16896}
\elib{https://elibrary.ru/item.asp?id=30060578}
\transl
\jour Tech. Phys. Lett.
\yr 2017
\vol 43
\issue 10
\pages 912--915
\crossref{https://doi.org/10.1134/S106378501710025X}
Linking options:
  • https://www.mathnet.ru/eng/pjtf6091
  • https://www.mathnet.ru/eng/pjtf/v43/i20/p3
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
    Statistics & downloads:
    Abstract page:36
    Full-text PDF :12
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024