The capacitive properties of structures based on mesoporous silicon irradiated by low-dose $\gamma$ rays

The influence of low doses of $\gamma$ rays on the capacitive properties of structures based on mesoporous silicon has been investigated. The concentration distribution of dangling charged bonds over the layer depth, which changes under irradiation, has been found using the capacitance–voltage characteristics at different frequencies of the test signal. It is shown that the concentration and relaxation time of surface charged states in a structure with a mesoporous silicon layer decrease under $\gamma$ irradiation, which makes the material promising for devices with controlled reactance (varactors) that are resistant to $\gamma$ irradiation.