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This article is cited in 1 scientific paper (total in 1 paper)
Peaking of optical pulses in vertical-cavity surface-emitting lasers with an active region based on submonolayer InGaAs quantum dots
V. V. Dyudelevab, N. A. Maleeva, A. G. Kuz'menkovac, S. A. Blokhina, V. Yu. Mylnikovad, V. I. Kuchinskiia, V. M. Ustinovc, È. U. Rafailovbe, G. S. Sokolovskiiab a Ioffe Institute, St. Petersburg
b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
c Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
d Peter the Great St. Petersburg Polytechnic University
e Aston Institute of Photonic Technologies, Aston University, Birmingham, UK
Abstract:
Vertical-cavity surface-emitting lasers with an active region based on submonolayer InGaAs quantum dots with an oxide-aperture diameter of $\sim$1 $\mu$m have been studied. It is established that peaking of the output optical pulses to 50–100 ps can be achieved by pumping these lasers with 10–100 ns electric pulses at a repetition frequency of 10–100 kHz.
Received: 31.07.2017
Citation:
V. V. Dyudelev, N. A. Maleev, A. G. Kuz'menkov, S. A. Blokhin, V. Yu. Mylnikov, V. I. Kuchinskii, V. M. Ustinov, È. U. Rafailov, G. S. Sokolovskii, “Peaking of optical pulses in vertical-cavity surface-emitting lasers with an active region based on submonolayer InGaAs quantum dots”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:24 (2017), 17–23; Tech. Phys. Lett., 43:12 (2017), 1099–1101
Linking options:
https://www.mathnet.ru/eng/pjtf6039 https://www.mathnet.ru/eng/pjtf/v43/i24/p17
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