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Stress relaxation in InGaAsP/InP heterostructures for 1064-nm laser radiation converters
A. E. Marichev, R. V. Levin, A. B. Gordeeva, G. S. Gagis, V. I. Kuchinskii, B. V. Pushnii, N. D. Prasolov, N. M. Shmidt Ioffe Institute, St. Petersburg
Abstract:
Specific features of mechanical-stress relaxation in InGaAsP/InP heterostructures for 1064 nm laser radiation converters have been studied. It is established that stress relaxation via the formation of an ordered relief on the surface of solid-solution layers in InGaAsP/InP heterostructures with indium content up to 80% can decrease the probability of spinodal decomposition of the solid solution, enhance its photoluminescence intensity, and increase the efficiency of laser-radiation conversion.
Received: 18.08.2016
Citation:
A. E. Marichev, R. V. Levin, A. B. Gordeeva, G. S. Gagis, V. I. Kuchinskii, B. V. Pushnii, N. D. Prasolov, N. M. Shmidt, “Stress relaxation in InGaAsP/InP heterostructures for 1064-nm laser radiation converters”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:2 (2017), 3–9; Tech. Phys. Lett., 43:1 (2017), 88–91
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https://www.mathnet.ru/eng/pjtf6010 https://www.mathnet.ru/eng/pjtf/v43/i2/p3
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Abstract page: | 40 | Full-text PDF : | 10 |
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