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This article is cited in 6 scientific papers (total in 6 papers)
The effect of low doses of gamma radiation on the electrophysical properties of mesoporous silicon
D. I. Bilenko, V. V. Galushka, A. E. Zharkova, V. I. Sidorov, D. V. Terin, E. I. Khasina Saratov State University
Abstract:
The effect of low exposure doses (5–40 kR) of gamma radiation on the electrical properties of structures based on a mesoporous silicon (SiMP) layer is investigated. It is demonstrated that the conductivity of the SiMP layer increases, the Fermi level shifts, and the trap density changes in gamma-irradiated Al/SiMP/$p$-Si/Al structures. Long-term stable switched-state memory in the region of the I–V curve hysteresis is revealed. This effect is controlled by the irradiation dose.
Received: 14.07.2016
Citation:
D. I. Bilenko, V. V. Galushka, A. E. Zharkova, V. I. Sidorov, D. V. Terin, E. I. Khasina, “The effect of low doses of gamma radiation on the electrophysical properties of mesoporous silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:3 (2017), 57–63; Tech. Phys. Lett., 43:2 (2017), 166–168
Linking options:
https://www.mathnet.ru/eng/pjtf6005 https://www.mathnet.ru/eng/pjtf/v43/i3/p57
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