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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2017, Volume 43, Issue 4, Pages 89–93
DOI: https://doi.org/10.21883/PJTF.2017.04.44302.16344
(Mi pjtf5995)
 

This article is cited in 3 scientific papers (total in 3 papers)

The relationship between the defectness of emitting nanoheterostructures of green InGaN/GaN LEDs and their threshold current values

V. A. Sergeevab, I. V. Frolova, O. A. Radaevab

a Ul'yanovsk Branch of Institute of Radioengineering and Electronics, Russian Academy of Sciences
b Ulyanovsk State Technical University
Full-text PDF (106 kB) Citations (3)
Abstract: It is shown that the threshold current of green InGaN/GaN light-emitting diodes (LEDs) can be used for evaluating quality of their light-emitting nanoheterostructures. The threshold current exhibits correlation with the value of operating current corresponding to the maximum of the external quantum efficiency of LEDs. It has been found that LEDs with high threshold currents tested in the dc regime exhibit faster degradation than devices with lower threshold currents.
Received: 26.05.2016
English version:
Technical Physics Letters, 2017, Volume 43, Issue 2, Pages 224–226
DOI: https://doi.org/10.1134/S1063785017020250
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. A. Sergeev, I. V. Frolov, O. A. Radaev, “The relationship between the defectness of emitting nanoheterostructures of green InGaN/GaN LEDs and their threshold current values”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:4 (2017), 89–93; Tech. Phys. Lett., 43:2 (2017), 224–226
Citation in format AMSBIB
\Bibitem{SerFroRad17}
\by V.~A.~Sergeev, I.~V.~Frolov, O.~A.~Radaev
\paper The relationship between the defectness of emitting nanoheterostructures of green InGaN/GaN LEDs and their threshold current values
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2017
\vol 43
\issue 4
\pages 89--93
\mathnet{http://mi.mathnet.ru/pjtf5995}
\crossref{https://doi.org/10.21883/PJTF.2017.04.44302.16344}
\elib{https://elibrary.ru/item.asp?id=28968759}
\transl
\jour Tech. Phys. Lett.
\yr 2017
\vol 43
\issue 2
\pages 224--226
\crossref{https://doi.org/10.1134/S1063785017020250}
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  • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
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