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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2017, Volume 43, Issue 4, Pages 64–71
DOI: https://doi.org/10.21883/PJTF.2017.04.44299.16494 (Mi pjtf5992) 		 
This article is cited in 3 scientific papers (total in 3 papers)

The structural state of epitaxial GaP films of different polarities grown on misoriented Si(001) substrates

I. D. Loshkarev, A. P. Vasilenko, E. M. Trukhanov, A. V. Kolesnikov, M. A. Putyato, M. Yu. Yesin, M. O. Petrushkov

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Full-text PDF (330 kB) Citations (3)
DOI: https://doi.org/10.21883/PJTF.2017.04.44299.16494
Abstract: The structure of GaP films grown by molecular-beam epitaxy on vicinal Si(1113) substrates has been studied by X-ray diffraction. It is established that the crystalline lattice of a pseudomorphic film rotates about the $\langle$110$\rangle$ axis toward increasing deviation from the singular orientation, while the subsequent relaxation leads to rotation in the opposite direction. This is valid for the films of both (001) and (00$\bar1$) polarities. Differences between the surface morphologies of relaxed and pseudomorphic GaP films are revealed.
Received: 26.09.2016
English version:
Technical Physics Letters, 2017, Volume 43, Issue 2, Pages 213–215
DOI: https://doi.org/10.1134/S1063785017020225
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: I. D. Loshkarev, A. P. Vasilenko, E. M. Trukhanov, A. V. Kolesnikov, M. A. Putyato, M. Yu. Yesin, M. O. Petrushkov, “The structural state of epitaxial GaP films of different polarities grown on misoriented Si(001) substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:4 (2017), 64–71; Tech. Phys. Lett., 43:2 (2017), 213–215
Citation in format AMSBIB
\Bibitem{LosVasTru17}
\by I.~D.~Loshkarev, A.~P.~Vasilenko, E.~M.~Trukhanov, A.~V.~Kolesnikov, M.~A.~Putyato, M.~Yu.~Yesin, M.~O.~Petrushkov
\paper The structural state of epitaxial GaP films of different polarities grown on misoriented Si(001) substrates
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2017
\vol 43
\issue 4
\pages 64--71
\mathnet{http://mi.mathnet.ru/pjtf5992}
\crossref{https://doi.org/10.21883/PJTF.2017.04.44299.16494}
\elib{https://elibrary.ru/item.asp?id=28968756}
\transl
\jour Tech. Phys. Lett.
\yr 2017
\vol 43
\issue 2
\pages 213--215
\crossref{https://doi.org/10.1134/S1063785017020225}
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    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
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