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This article is cited in 9 scientific papers (total in 9 papers)
Electron traps in Gd$_{3}$Ga$_{3}$Al$_{2}$O$_{12}$:Ce garnets doped with rare-earth ions
V. M. Khanina, P. A. Rodnyia, H. Wieczorekb, C. R. Rondab a Peter the Great St. Petersburg Polytechnic University
b Philips Research Eindhoven, Eindhoven, the Netherlands
Abstract:
The curves of thermally stimulated luminescence of Gd$_{3}$Ga$_{3}$Al$_{2}$O$_{12}$:Ce$^{3+}$ ceramics (a nominally pure sample and samples doped with rare-earth ions) are measured in the temperature range of 80–550 K. The depth and the frequency factor of electron traps established by Eu and Yb impurities are determined. An energy-level diagram of rare-earth ions in the bandgap of Gd$_{3}$Ga$_{3}$Al$_{2}$O$_{12}$ is presented.
Received: 13.12.2016
Citation:
V. M. Khanin, P. A. Rodnyi, H. Wieczorek, C. R. Ronda, “Electron traps in Gd$_{3}$Ga$_{3}$Al$_{2}$O$_{12}$:Ce garnets doped with rare-earth ions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:9 (2017), 59–66; Tech. Phys. Lett., 43:5 (2017), 439–442
Linking options:
https://www.mathnet.ru/eng/pjtf5929 https://www.mathnet.ru/eng/pjtf/v43/i9/p59
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