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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2018, Volume 44, Issue 2, Pages 11–17
DOI: https://doi.org/10.21883/PJTF.2018.02.45459.16947 (Mi pjtf5902) 		 
This article is cited in 5 scientific papers (total in 5 papers)

The influence of the annealing regime on the properties of terahertz antennas based on low-temperature-grown gallium arsenide

S. A. Nomoeva, I. S. Vasil'evskiia, A. N. Vinichenkoa, K. I. Kozlovskiia, A. A. Chistyakova, E. D. Mishinab, D. I. Khusyainovb, A. M. Buryakovb

a National Engineering Physics Institute "MEPhI", Moscow
b MIREA — Russian Technological University, Moscow
Full-text PDF (125 kB) Citations (5)
DOI: https://doi.org/10.21883/PJTF.2018.02.45459.16947
Abstract: Low-temperature gallium arsenide (LT-GaAs) films were grown by the method of molecularbeam epitaxy (MBE) at a reduced temperature (230$^\circ$C) on GaAs(100) substrates and subjected to postgrowth annealing in various regimes. Photoconductive antennas (PCAs) with flag geometry formed on the film surface were characterized by terahertz (THz) response power at various bias voltages. The method of THz spectroscopy was used to study the characteristics of PCAs based on LT-GaAs films annealed in various regimes and the optimum interval of postgrowth annealing temperatures (670–720$^\circ$C) was established.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 3.7331.2017/9.10
Russian Foundation for Basic Research 16-29-14029 офи_м
Received: 03.07.2017
English version:
Technical Physics Letters, 2018, Volume 44, Issue 1, Pages 44–46
DOI: https://doi.org/10.1134/S1063785018010169
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. A. Nomoev, I. S. Vasil'evskii, A. N. Vinichenko, K. I. Kozlovskii, A. A. Chistyakov, E. D. Mishina, D. I. Khusyainov, A. M. Buryakov, “The influence of the annealing regime on the properties of terahertz antennas based on low-temperature-grown gallium arsenide”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:2 (2018), 11–17; Tech. Phys. Lett., 44:1 (2018), 44–46
Citation in format AMSBIB
\Bibitem{NomVasVin18}
\by S.~A.~Nomoev, I.~S.~Vasil'evskii, A.~N.~Vinichenko, K.~I.~Kozlovskii, A.~A.~Chistyakov, E.~D.~Mishina, D.~I.~Khusyainov, A.~M.~Buryakov
\paper The influence of the annealing regime on the properties of terahertz antennas based on low-temperature-grown gallium arsenide
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2018
\vol 44
\issue 2
\pages 11--17
\mathnet{http://mi.mathnet.ru/pjtf5902}
\crossref{https://doi.org/10.21883/PJTF.2018.02.45459.16947}
\elib{https://elibrary.ru/item.asp?id=32737553}
\transl
\jour Tech. Phys. Lett.
\yr 2018
\vol 44
\issue 1
\pages 44--46
\crossref{https://doi.org/10.1134/S1063785018010169}
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