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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2018, Volume 44, Issue 8, Pages 57–62
DOI: https://doi.org/10.21883/PJTF.2018.08.45967.17154 (Mi pjtf5831) 		 
This article is cited in 3 scientific papers (total in 3 papers)

Photovoltaic characteristics of AlGaAs-based LEDs

A. A. Sokolovskiĭ

Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences
Full-text PDF (125 kB) Citations (3)
DOI: https://doi.org/10.21883/PJTF.2018.08.45967.17154
Abstract: Photovoltaic characteristics of more than 20 types of AlGaAs-based light-emitting diodes operating in the 830- to 970-nm wavelength range have been considered. It is established that Al$_{x}$Ga$_{1-x}$As semiconductor structures employed in these devices can also be used for manufacturing photovoltaic converters of monochromatic radiation with quite high efficiency.
Received: 13.12.2017
English version:
Technical Physics Letters, 2018, Volume 44, Issue 4, Pages 341–343
DOI: https://doi.org/10.1134/S1063785018040259
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. A. Sokolovskiǐ, “Photovoltaic characteristics of AlGaAs-based LEDs”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:8 (2018), 57–62; Tech. Phys. Lett., 44:4 (2018), 341–343
Citation in format AMSBIB
\Bibitem{Sok18}
\by A.~A.~Sokolovski{\v\i}
\paper Photovoltaic characteristics of AlGaAs-based LEDs
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2018
\vol 44
\issue 8
\pages 57--62
\mathnet{http://mi.mathnet.ru/pjtf5831}
\crossref{https://doi.org/10.21883/PJTF.2018.08.45967.17154}
\elib{https://elibrary.ru/item.asp?id=32740263}
\transl
\jour Tech. Phys. Lett.
\yr 2018
\vol 44
\issue 4
\pages 341--343
\crossref{https://doi.org/10.1134/S1063785018040259}
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    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
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