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This article is cited in 2 scientific papers (total in 2 papers)
Generation of charge carriers in uniformly heated Si–Ge films heavily doped with titanium
Sh. K. Kuchkanov, Kh. B. Ashurov Institute of Ion-Plasma and Laser Technologies, Uzbekistan Academy of Sciences, Tashkent, Uzbekistan
Abstract:
We have studied the generation of charge carriers and development of the electromotive force (emf) in uniformly heated $n$-type Si–Ge films heavily doped with titanium obtained by chemical-vapor deposition on $p$-type silicon substrates. A maximum emf value of $\sim$3 mV was observed at temperatures within 500–600 K for dark short-circuit currents $\sim$0.5–1 $\mu$A, the value of which increased with the temperature to reach $\sim$3 $\mu$A at 800 K.
Received: 14.12.2017
Citation:
Sh. K. Kuchkanov, Kh. B. Ashurov, “Generation of charge carriers in uniformly heated Si–Ge films heavily doped with titanium”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:8 (2018), 42–48; Tech. Phys. Lett., 44:4 (2018), 334–336
Linking options:
https://www.mathnet.ru/eng/pjtf5829 https://www.mathnet.ru/eng/pjtf/v44/i8/p42
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