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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2018, Volume 44, Issue 13, Pages 19–27
DOI: https://doi.org/10.21883/PJTF.2018.13.46323.17160 (Mi pjtf5759) 		 
X-ray diffraction analysis of epitaxial layers with the properties of a dislocation filter

I. D. Loshkarev, A. P. Vasilenko, E. M. Trukhanov, A. V. Kolesnikov, M. O. Petrushkov, M. A. Putyato

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Full-text PDF (742 kB)
DOI: https://doi.org/10.21883/PJTF.2018.13.46323.17160
Abstract: An approach to instant testing of epitaxial films with a sharp decrease in the threading dislocation density is proposed. High-resolution X-ray diffractometry, including reciprocal space mapping, has been used. The structure of GaAs/Si(001) heterosystems with low-temperature GaAs layers has been analyzed. A decrease in the density of threading dislocations in the GaAs film with the formation of a small-angle boundary has been detected.
Funding agency Grant number
Russian Foundation for Basic Research 16-32-60087 мол_а_дк
Received: 18.12.2017
English version:
Technical Physics Letters, 2018, Volume 44, Issue 7, Pages 562–565
DOI: https://doi.org/10.1134/S106378501807009X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: I. D. Loshkarev, A. P. Vasilenko, E. M. Trukhanov, A. V. Kolesnikov, M. O. Petrushkov, M. A. Putyato, “X-ray diffraction analysis of epitaxial layers with the properties of a dislocation filter”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:13 (2018), 19–27; Tech. Phys. Lett., 44:7 (2018), 562–565
Citation in format AMSBIB
\Bibitem{LosVasTru18}
\by I.~D.~Loshkarev, A.~P.~Vasilenko, E.~M.~Trukhanov, A.~V.~Kolesnikov, M.~O.~Petrushkov, M.~A.~Putyato
\paper X-ray diffraction analysis of epitaxial layers with the properties of a dislocation filter
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2018
\vol 44
\issue 13
\pages 19--27
\mathnet{http://mi.mathnet.ru/pjtf5759}
\crossref{https://doi.org/10.21883/PJTF.2018.13.46323.17160}
\elib{https://elibrary.ru/item.asp?id=35270653}
\transl
\jour Tech. Phys. Lett.
\yr 2018
\vol 44
\issue 7
\pages 562--565
\crossref{https://doi.org/10.1134/S106378501807009X}
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