Pisma v Zhurnal Tekhnicheskoi Fiziki
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Guidelines for authors

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Pisma v Zhurnal Tekhnicheskoi Fiziki:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Pisma v Zhurnal Tekhnicheskoi Fiziki, 2018, Volume 44, Issue 16, Pages 67–74
DOI: https://doi.org/10.21883/PJTF.2018.16.46478.17282 (Mi pjtf5723) 		 
Stimulated emission at 1.3-$\mu$m wavelength in metamorphic InGaAs/InGaAsP structure with quantum wells grown on Ge/Si (001) substrate

V. Ya. Aleshkinab, N. V. Baidusb, O. V. Vikhrovab, A. A. Dubinovab, B. N. Zvonkovb, Z. F. Krasil'nikab, K. E. Kudryavtsevab, S. M. Nekorkinb, A. V. Novikovab, A. V. Rykovb, I. V. Samartsevb, D. V. Yurasovab

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Lobachevsky State University of Nizhny Novgorod
Full-text PDF (126 kB)
DOI: https://doi.org/10.21883/PJTF.2018.16.46478.17282
Abstract: A laser structure comprising metamorphic InGaAsP layer and InGaAs quantum wells on a non-inclined Si(001) substrate with relaxed Ge buffer layer has been grown for the first time by metal-organic vapor phase epitaxy (MOVPE). The optically pumped lasers exhibit stimulated emission at a wavelength of 1.3 $\mu$m. At liquid-nitrogen temperature, the threshold power density of pumping at 0.8 $\mu$m amounted to 250 kW/cm$^2$.
Funding agency Grant number
Russian Science Foundation 14-12-00644
Received: 07.03.2018
English version:
Technical Physics Letters, 2018, Volume 44, Issue 8, Pages 735–738
DOI: https://doi.org/10.1134/S1063785018080175
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. Ya. Aleshkin, N. V. Baidus, O. V. Vikhrova, A. A. Dubinov, B. N. Zvonkov, Z. F. Krasil'nik, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, A. V. Rykov, I. V. Samartsev, D. V. Yurasov, “Stimulated emission at 1.3-$\mu$m wavelength in metamorphic InGaAs/InGaAsP structure with quantum wells grown on Ge/Si (001) substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:16 (2018), 67–74; Tech. Phys. Lett., 44:8 (2018), 735–738
Citation in format AMSBIB
\Bibitem{AleBaiVik18}
\by V.~Ya.~Aleshkin, N.~V.~Baidus, O.~V.~Vikhrova, A.~A.~Dubinov, B.~N.~Zvonkov, Z.~F.~Krasil'nik, K.~E.~Kudryavtsev, S.~M.~Nekorkin, A.~V.~Novikov, A.~V.~Rykov, I.~V.~Samartsev, D.~V.~Yurasov
\paper Stimulated emission at 1.3-$\mu$m wavelength in metamorphic InGaAs/InGaAsP structure with quantum wells grown on Ge/Si (001) substrate
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2018
\vol 44
\issue 16
\pages 67--74
\mathnet{http://mi.mathnet.ru/pjtf5723}
\crossref{https://doi.org/10.21883/PJTF.2018.16.46478.17282}
\elib{https://elibrary.ru/item.asp?id=35270708}
\transl
\jour Tech. Phys. Lett.
\yr 2018
\vol 44
\issue 8
\pages 735--738
\crossref{https://doi.org/10.1134/S1063785018080175}
Linking options:
  • https://www.mathnet.ru/eng/pjtf5723
  • https://www.mathnet.ru/eng/pjtf/v44/i16/p67
    • Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
    Statistics & downloads:
    Abstract page:51
    Full-text PDF :18
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024