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Stimulated emission at 1.3-$\mu$m wavelength in metamorphic InGaAs/InGaAsP structure with quantum wells grown on Ge/Si (001) substrate
V. Ya. Aleshkinab, N. V. Baidusb, O. V. Vikhrovab, A. A. Dubinovab, B. N. Zvonkovb, Z. F. Krasil'nikab, K. E. Kudryavtsevab, S. M. Nekorkinb, A. V. Novikovab, A. V. Rykovb, I. V. Samartsevb, D. V. Yurasovab a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Lobachevsky State University of Nizhny Novgorod
Abstract:
A laser structure comprising metamorphic InGaAsP layer and InGaAs quantum wells on a non-inclined Si(001) substrate with relaxed Ge buffer layer has been grown for the first time by metal-organic vapor phase epitaxy (MOVPE). The optically pumped lasers exhibit stimulated emission at a wavelength of 1.3 $\mu$m. At liquid-nitrogen temperature, the threshold power density of pumping at 0.8 $\mu$m amounted to 250 kW/cm$^2$.
Received: 07.03.2018
Citation:
V. Ya. Aleshkin, N. V. Baidus, O. V. Vikhrova, A. A. Dubinov, B. N. Zvonkov, Z. F. Krasil'nik, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, A. V. Rykov, I. V. Samartsev, D. V. Yurasov, “Stimulated emission at 1.3-$\mu$m wavelength in metamorphic InGaAs/InGaAsP structure with quantum wells grown on Ge/Si (001) substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:16 (2018), 67–74; Tech. Phys. Lett., 44:8 (2018), 735–738
Linking options:
https://www.mathnet.ru/eng/pjtf5723 https://www.mathnet.ru/eng/pjtf/v44/i16/p67
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