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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2018, Volume 44, Issue 16, Pages 67–74
DOI: https://doi.org/10.21883/PJTF.2018.16.46478.17282 (Mi pjtf5723) 		 
Stimulated emission at 1.3-$\mu$m wavelength in metamorphic InGaAs/InGaAsP structure with quantum wells grown on Ge/Si (001) substrate

V. Ya. Aleshkinab, N. V. Baidusb, O. V. Vikhrovab, A. A. Dubinovab, B. N. Zvonkovb, Z. F. Krasil'nikab, K. E. Kudryavtsevab, S. M. Nekorkinb, A. V. Novikovab, A. V. Rykovb, I. V. Samartsevb, D. V. Yurasovab

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Lobachevsky State University of Nizhny Novgorod
Full-text PDF (126 kB)
DOI: https://doi.org/10.21883/PJTF.2018.16.46478.17282
Abstract: A laser structure comprising metamorphic InGaAsP layer and InGaAs quantum wells on a non-inclined Si(001) substrate with relaxed Ge buffer layer has been grown for the first time by metal-organic vapor phase epitaxy (MOVPE). The optically pumped lasers exhibit stimulated emission at a wavelength of 1.3 $\mu$m. At liquid-nitrogen temperature, the threshold power density of pumping at 0.8 $\mu$m amounted to 250 kW/cm$^2$.
Funding agency Grant number
Russian Science Foundation 14-12-00644
Received: 07.03.2018
English version:
Technical Physics Letters, 2018, Volume 44, Issue 8, Pages 735–738
DOI: https://doi.org/10.1134/S1063785018080175
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. Ya. Aleshkin, N. V. Baidus, O. V. Vikhrova, A. A. Dubinov, B. N. Zvonkov, Z. F. Krasil'nik, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, A. V. Rykov, I. V. Samartsev, D. V. Yurasov, “Stimulated emission at 1.3-$\mu$m wavelength in metamorphic InGaAs/InGaAsP structure with quantum wells grown on Ge/Si (001) substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:16 (2018), 67–74; Tech. Phys. Lett., 44:8 (2018), 735–738
Citation in format AMSBIB
\Bibitem{AleBaiVik18}
\by V.~Ya.~Aleshkin, N.~V.~Baidus, O.~V.~Vikhrova, A.~A.~Dubinov, B.~N.~Zvonkov, Z.~F.~Krasil'nik, K.~E.~Kudryavtsev, S.~M.~Nekorkin, A.~V.~Novikov, A.~V.~Rykov, I.~V.~Samartsev, D.~V.~Yurasov
\paper Stimulated emission at 1.3-$\mu$m wavelength in metamorphic InGaAs/InGaAsP structure with quantum wells grown on Ge/Si (001) substrate
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2018
\vol 44
\issue 16
\pages 67--74
\mathnet{http://mi.mathnet.ru/pjtf5723}
\crossref{https://doi.org/10.21883/PJTF.2018.16.46478.17282}
\elib{https://elibrary.ru/item.asp?id=35270708}
\transl
\jour Tech. Phys. Lett.
\yr 2018
\vol 44
\issue 8
\pages 735--738
\crossref{https://doi.org/10.1134/S1063785018080175}
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