Correlated variation of electrical characteristics of a thin-film field-effect transistor during modification of the physical properties of an InZnO : N oxide semiconductor channel

We have studied changes in the transmission and current–voltage characteristics of a thin-film field-effect transistor (TFT) during modification of the physical properties of its oxide semiconductor channel based on InZnO:N layer. Modification of the electrical parameters of the device was based on the phenomenon of photoinduced charge accumulation in the semiconductor. It is established that the slopes and intercepts of the capacitance–voltage $(C_{G}-V_{G})$ and transmission $(I_{D}-V_{G})$ curves of the TFT under illumination exhibit correlated similar variations. The obtained results justify joint use of the $C_{G}-V_{G}$ and $I_{D}-V_{G}$ curves in the analysis of peculiarities of the energy band structure of oxide semiconductors.