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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2018, Volume 44, Issue 20, Pages 30–36
DOI: https://doi.org/10.21883/PJTF.2018.20.46803.17322 (Mi pjtf5663) 		 
This article is cited in 1 scientific paper (total in 1 paper)

The reliability of revealing threading dislocations in epitaxial films by structure-sensitive etching

A. S. Deryabin, L. V. Sokolov, E. M. Trukhanov, K. B. Fritzler

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Full-text PDF (855 kB) Citations (1)
DOI: https://doi.org/10.21883/PJTF.2018.20.46803.17322
Abstract: Correspondence between threading dislocations (TDs) in epitaxial films and the etch pits observed upon selective chemical etching of the samples was studied in Ge/Si(001) heterostructures. It is established that the density of TDs revealed in epitaxial films with thicknesses $h\le 1$ $\mu$m can be significantly understated because of insufficient resolution of optical microscopy. Recommendations are given that increase the reliability of PD density estimation by means of structure-sensitive etching.
Received: 06.04.2018
English version:
Technical Physics Letters, 2018, Volume 44, Issue 10, Pages 916–918
DOI: https://doi.org/10.1134/S1063785018100218
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. S. Deryabin, L. V. Sokolov, E. M. Trukhanov, K. B. Fritzler, “The reliability of revealing threading dislocations in epitaxial films by structure-sensitive etching”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:20 (2018), 30–36; Tech. Phys. Lett., 44:10 (2018), 916–918
Citation in format AMSBIB
\Bibitem{DerSokTru18}
\by A.~S.~Deryabin, L.~V.~Sokolov, E.~M.~Trukhanov, K.~B.~Fritzler
\paper The reliability of revealing threading dislocations in epitaxial films by structure-sensitive etching
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2018
\vol 44
\issue 20
\pages 30--36
\mathnet{http://mi.mathnet.ru/pjtf5663}
\crossref{https://doi.org/10.21883/PJTF.2018.20.46803.17322}
\elib{https://elibrary.ru/item.asp?id=36905898}
\transl
\jour Tech. Phys. Lett.
\yr 2018
\vol 44
\issue 10
\pages 916--918
\crossref{https://doi.org/10.1134/S1063785018100218}
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    • This publication is cited in the following 1 articles:
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