Formation of a nanophase wetting layer and metal growth on a semiconductor

Based on the data on the atomic density of a film and degree of its homogeneity during the formation of the interface between 3$d$ transition metals (Cr, Co, Fe, or Cu) and silicon, a new concept of forming a contact between a reactive metal and a semiconductor has been justified. According to this concept, the low-temperature vapor-phase deposition of a metal onto a semiconductor is accompanied by the formation of a two-dimensional nanophase wetting layer of a metal or its mixture with silicon with a thickness of several monolayers, which significantly affects the interface formation and structure. This concept changes a perspective of forming a contact between a metal and a semiconductor substrate: it is necessary to take into account not only the formation of surface phases and clusters and/or the mixing process, but also the effect of elastic wetting of a substrate by the forming phases.