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Emission regimes of 1.06 $\mu$m spectral bandwidth two-sectional lasers with quantum dot based active layer
I. M. Gadzhieva, M. S. Buyaloa, A. S. Payusova, A. E. Gubenkob, S. S. Mikhrinb, V. N. Nevedomskiya, E. L. Portnoĭa a Ioffe Institute, St. Petersburg
b Innolume GmbH, Dortmund, Germany
Abstract:
We have investigated two-sectional semiconductor lasers with an active region comprising five layers of InGaAs quantum dots, emitting in the spectral range near 1.06 $\mu$m. Regimes of passive mode-locking, passive Q-switching, and mode-locking with pulse modulated amplitude are realized. The transition conditions between generation regimes are investigated. The frequency tuning range with current increase in the Q-switched regime exceeds more than 4 times. The duration of the mode-locked pulses was 2 ps at the pulse repetition rate of 44.3 GHz.
Received: 26.06.2018
Citation:
I. M. Gadzhiev, M. S. Buyalo, A. S. Payusov, A. E. Gubenko, S. S. Mikhrin, V. N. Nevedomskiy, E. L. Portnoǐ, “Emission regimes of 1.06 $\mu$m spectral bandwidth two-sectional lasers with quantum dot based active layer”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:21 (2018), 30–39; Tech. Phys. Lett., 44:11 (2018), 965–968
Linking options:
https://www.mathnet.ru/eng/pjtf5649 https://www.mathnet.ru/eng/pjtf/v44/i21/p30
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Abstract page: | 52 | Full-text PDF : | 5 |
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