Peculiarities of the condensation of silicon on the surface of a tungsten single crystal

Using the methods of the field emission microscopy, the condensation of Si on the W surface at various temperatures $T$ of the substrate and numbers $n$ of monatomic layers of the deposited condensate is studied. At low temperatures of $T\sim$ 600 K, a low-temperature Si monolayer with the structure of pure W is formed on the surface, whereas another structure of a high-temperature monolayer, namely, surface silicide, is formed at $T\ge$ 1000 K. The low-temperature monolayer and surface silicide also differ in their orienting effect when constructing the Si layers. In the case of condensation on a low-temperature monolayer, crystallites of Si are formed starting already from the third monolayer at $n\ge$ 3, whereas the Si crystallites grow during the condensation on surface silicide starting from $n\ge$ 300 monolayers.