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Properties of the barium–strontium titanate films deposited onto the silicon substrate by rf cathode sputtering
V. B. Shirokovab, S. P. Zinchenkoab, L. I. Kiselevaa, A. V. Pavlenkoab a Southern Research Center of the Russian Academy of Sciences, Rostov-on-Don
b Southern Federal University, Rostov-on-Don
Abstract:
Using rf cathode sputtering of a target in the oxygen atmosphere, Ba$_{0.6}$Sr$_{0.4}$TiO$_{3}$ solid solution thin films have been formed on the single-crystal Si(001) cut surface and their crystal structure, microstructure, and optical characteristics have been investigated. It is shown that the films are optically anisotropic, polycrystalline, and have a $c$ axis preferred direction perpendicular to the substrate. The $a$ and $b$ axes in the substrate plane have no preferred direction. It has been established that, during the synthesis, a buffer layer with a thickness of about 20 nm forms between the film and substrate, which is optically equivalent to silicon oxide.
Received: 01.11.2017
Citation:
V. B. Shirokov, S. P. Zinchenko, L. I. Kiseleva, A. V. Pavlenko, “Properties of the barium–strontium titanate films deposited onto the silicon substrate by rf cathode sputtering”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018), 81–87; Tech. Phys. Lett., 44:12 (2018), 1157–1159
Linking options:
https://www.mathnet.ru/eng/pjtf5600 https://www.mathnet.ru/eng/pjtf/v44/i24/p81
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Abstract page: | 45 | Full-text PDF : | 29 |
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