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This article is cited in 1 scientific paper (total in 1 paper)
Specific features of the luminescence of ZnO : Te/GaN/Al$_{2}$O$_{3}$ heterostructures
A. M. Bagamadova, A. Sh. Asvarov, A. K. Omaev, M. E. Zobov Daghestan Institute of Physics after Amirkhanov, Makhachkala, Russia
Abstract:
High-quality heteroepitaxial (0001)ZnO : Te/(0001)GaN/(0001)Аl$_{2}$O$_{3}$ structures have been grown by hydrogen vapor-phase epitaxy in a low-pressure continuous flow reactor. X-ray diffraction analysis of these heterostructures has been carried out, which revealed the high structural quality of thin zinc oxide layers. The surface morphology and specific features of UV photoluminescence of the ZnO/GaN/Аl$_{2}$O$_{3}$ heterostructure have been analyzed.
Received: 03.07.2018
Citation:
A. M. Bagamadova, A. Sh. Asvarov, A. K. Omaev, M. E. Zobov, “Specific features of the luminescence of ZnO : Te/GaN/Al$_{2}$O$_{3}$ heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018), 52–58; Tech. Phys. Lett., 44:12 (2018), 1142–1144
Linking options:
https://www.mathnet.ru/eng/pjtf5596 https://www.mathnet.ru/eng/pjtf/v44/i24/p52
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