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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 45, Issue 1, Pages 46–49
DOI: https://doi.org/10.21883/PJTF.2019.01.47157.17532 (Mi pjtf5584) 		 
Electron emission properties of submicron semiconductor particles

M. V. Gavrikova, N. D. Zhukova, D. S. Mosiyashb, A. A. Khazanovb

a Saratov State University
b OOO Ref-Svet, Saratov, 410032, Russia
Full-text PDF (176 kB)
DOI: https://doi.org/10.21883/PJTF.2019.01.47157.17532
Abstract: The electron emission properties of submicron Si, GaAs, InSb, and InAs semiconductor particles and their multigrain structures have been investigated. The effect of the properties of nanoparticles on the field and secondary emissions has been established. A scanning electron microscopy-based method for measuring the secondary emission coefficient of semiconductors has been proposed. The effect of photoexcitation of the multigrain structure of submicron semiconductor particles on their secondary emission properties has been investigated by the vacuum triode method.
Funding agency Grant number
Russian Foundation for Basic Research 17-07-00139
Received: 21.09.2018
English version:
Technical Physics Letters, 2018, Volume 44, Issue 12, Pages 1230–1233
DOI: https://doi.org/10.1134/S1063785019010061
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. V. Gavrikov, N. D. Zhukov, D. S. Mosiyash, A. A. Khazanov, “Electron emission properties of submicron semiconductor particles”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:1 (2019), 46–49; Tech. Phys. Lett., 44:12 (2018), 1230–1233
Citation in format AMSBIB
\Bibitem{GavZhuMos19}
\by M.~V.~Gavrikov, N.~D.~Zhukov, D.~S.~Mosiyash, A.~A.~Khazanov
\paper Electron emission properties of submicron semiconductor particles
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 45
\issue 1
\pages 46--49
\mathnet{http://mi.mathnet.ru/pjtf5584}
\crossref{https://doi.org/10.21883/PJTF.2019.01.47157.17532}
\elib{https://elibrary.ru/item.asp?id=37481262}
\transl
\jour Tech. Phys. Lett.
\yr 2018
\vol 44
\issue 12
\pages 1230--1233
\crossref{https://doi.org/10.1134/S1063785019010061}
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