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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 45, Issue 1, Pages 20–22
DOI: https://doi.org/10.21883/PJTF.2019.01.47150.17534 (Mi pjtf5577) 		 
Multiple upsets induced by protons in 90-nm SRAMs

N. A. Ivanova, O. V. Lobanova, V. V. Pashuka, M. O. Prygunovb, K. G. Sizovac

a The Petersburg Nuclear Physics Institute, The National Research Center "Kurchatov Institute"
b LLC O2 Light Systems, St. Petersburg, 196084, Russia
c LLC NPC Granat, St. Petersburg
Full-text PDF (154 kB)
DOI: https://doi.org/10.21883/PJTF.2019.01.47150.17534
Abstract: The occurrence of single-event upsets (SEUs) in 90-nm SRAM integrated circuits irradiated by 1000-MeV protons has been investigated. The experimental data were analyzed and processed, and the results showed the possibility of multiple cell upsets in the integrated circuits studied.
Received: 21.09.2018
English version:
Technical Physics Letters, 2018, Volume 44, Issue 12, Pages 1205–1207
DOI: https://doi.org/10.1134/S1063785019010097
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. A. Ivanov, O. V. Lobanov, V. V. Pashuk, M. O. Prygunov, K. G. Sizova, “Multiple upsets induced by protons in 90-nm SRAMs”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:1 (2019), 20–22; Tech. Phys. Lett., 44:12 (2018), 1205–1207
Citation in format AMSBIB
\Bibitem{IvaLobPas19}
\by N.~A.~Ivanov, O.~V.~Lobanov, V.~V.~Pashuk, M.~O.~Prygunov, K.~G.~Sizova
\paper Multiple upsets induced by protons in 90-nm SRAMs
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 45
\issue 1
\pages 20--22
\mathnet{http://mi.mathnet.ru/pjtf5577}
\crossref{https://doi.org/10.21883/PJTF.2019.01.47150.17534}
\elib{https://elibrary.ru/item.asp?id=37481255}
\transl
\jour Tech. Phys. Lett.
\yr 2018
\vol 44
\issue 12
\pages 1205--1207
\crossref{https://doi.org/10.1134/S1063785019010097}
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