The influence of an amorphous silicon layer on the adsorption properties of a semiconductor structure under photostimulation conditions

The photostimulated adsorption of glucose oxidase (GOx) on the surface of single-crystalline Si wafers with an amorphous silicon ($a$-Si) layer was examined. Estimation of the difference between the surface coverage by GOx molecules deposited under illumination and in the dark showed that this value increased for the structures with $a$-Si layer by a factor of 2.5 in the case of $n$-Si and by a factor of 1.5 in the case of $p$-Si. It is revealed that the $n$-Si/$a$-Si structures can be used for preliminary photostimulation of the GOx adsorption process.