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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 45, Issue 4, Pages 59–62
DOI: https://doi.org/10.21883/PJTF.2019.04.47342.17609 (Mi pjtf5539) 		 
The influence of the InAlAs layer surface morphology on the temperature dependence of parameters of Au/Ti/$n$-InAlAs (001) Schottky diodes

I. B. Chistokhina, M. S. Aksenovab, N. A. Valishevaa, D. V. Dmitrieva, I. V. Marchishina, A. I. Toropova, K. S. Zhuravlevab

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
Full-text PDF (714 kB)
DOI: https://doi.org/10.21883/PJTF.2019.04.47342.17609
Abstract: Growth-related structural defects present on the surface of InAlAs layers grown by molecular beam epitaxy on InP(001) substrates influence the temperature dependences of the current–voltage characteristics of Au/Ti/InAlAs Schottky barriers. It is established that these defects in the form of pits cause the appearance of regions with reduced barrier height. At a surface density of $\ge$ 10$^7$ cm$^{-2}$, these defects significantly influence the parameters of the Schottky barriers at temperatures below 200 K.
Received: 27.11.2018
Revised: 27.11.2018
Accepted: 30.11.2018
English version:
Technical Physics Letters, 2019, Volume 45, Issue 2, Pages 180–184
DOI: https://doi.org/10.1134/S106378501902024X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: I. B. Chistokhin, M. S. Aksenov, N. A. Valisheva, D. V. Dmitriev, I. V. Marchishin, A. I. Toropov, K. S. Zhuravlev, “The influence of the InAlAs layer surface morphology on the temperature dependence of parameters of Au/Ti/$n$-InAlAs (001) Schottky diodes”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019), 59–62; Tech. Phys. Lett., 45:2 (2019), 180–184
Citation in format AMSBIB
\Bibitem{ChiAksVal19}
\by I.~B.~Chistokhin, M.~S.~Aksenov, N.~A.~Valisheva, D.~V.~Dmitriev, I.~V.~Marchishin, A.~I.~Toropov, K.~S.~Zhuravlev
\paper The influence of the InAlAs layer surface morphology on the temperature dependence of parameters of Au/Ti/$n$-InAlAs (001) Schottky diodes
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 45
\issue 4
\pages 59--62
\mathnet{http://mi.mathnet.ru/pjtf5539}
\crossref{https://doi.org/10.21883/PJTF.2019.04.47342.17609}
\elib{https://elibrary.ru/item.asp?id=37481335}
\transl
\jour Tech. Phys. Lett.
\yr 2019
\vol 45
\issue 2
\pages 180--184
\crossref{https://doi.org/10.1134/S106378501902024X}
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