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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 45, Issue 4, Pages 31–33
DOI: https://doi.org/10.21883/PJTF.2019.04.47334.17599 (Mi pjtf5531) 		 
This article is cited in 1 scientific paper (total in 1 paper)

BaTiO$_{3}$/LaSrMnO$_{3}$ heterostructure grown on sapphire for ferroelectric tunneling junctions

A. G. Gagarina, A. V. Tumarkina, E. N. Sapegoa, T. S. Kunkel'bc, V. M. Stozharovd

a Saint Petersburg Electrotechnical University "LETI"
b Peter the Great St. Petersburg Polytechnic University
c Ioffe Institute, St. Petersburg
d Herzen State Pedagogical University of Russia, St. Petersburg
Full-text PDF (205 kB) Citations (1)
DOI: https://doi.org/10.21883/PJTF.2019.04.47334.17599
Abstract: BaTiO$_{3}$/LaSrMnO$_{3}$ structures with a ferroelectric layer thickness of 10 nm have been formed on $r$-cut sapphire substrate by means of high-frequency magnetron sputtering. Investigations of the sample structure showed the presence of a crystalline phase, while measurements of electrical properties revealed piezoelectric response of the BTO films. The study of local current–voltage characteristics showed dependence of the sample resistance on the prehistory of voltage application as determined by ferroelectric hysteresis of the BTO layer.
Funding agency Grant number
Russian Foundation for Basic Research 16-08-00808 A
Received: 16.11.2018
Revised: 16.11.2018
Accepted: 22.11.2018
English version:
Technical Physics Letters, 2019, Volume 45, Issue 2, Pages 152–154
DOI: https://doi.org/10.1134/S1063785019020263
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. G. Gagarin, A. V. Tumarkin, E. N. Sapego, T. S. Kunkel', V. M. Stozharov, “BaTiO$_{3}$/LaSrMnO$_{3}$ heterostructure grown on sapphire for ferroelectric tunneling junctions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019), 31–33; Tech. Phys. Lett., 45:2 (2019), 152–154
Citation in format AMSBIB
\Bibitem{GagTumSap19}
\by A.~G.~Gagarin, A.~V.~Tumarkin, E.~N.~Sapego, T.~S.~Kunkel', V.~M.~Stozharov
\paper BaTiO$_{3}$/LaSrMnO$_{3}$ heterostructure grown on sapphire for ferroelectric tunneling junctions
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 45
\issue 4
\pages 31--33
\mathnet{http://mi.mathnet.ru/pjtf5531}
\crossref{https://doi.org/10.21883/PJTF.2019.04.47334.17599}
\elib{https://elibrary.ru/item.asp?id=37481327}
\transl
\jour Tech. Phys. Lett.
\yr 2019
\vol 45
\issue 2
\pages 152--154
\crossref{https://doi.org/10.1134/S1063785019020263}
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    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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