Comparative photoluminescent analysis of point defects in SiO$_{2}$ induced by implantation of Ar$^{+}$ ions and neutron irradiation

The introduction of Si$^{+}$ ions and ions of other elements into amorphous silicon dioxide during their interaction causes damage to the structural bonds, which is observed in the vibrational spectral bands. Pure SiO$_{2}$ has no optical transitions but the bands of induced point defects appear in the photoluminescence spectrum when ions/neutrons are introduced. The generation of photoluminescence-active defects by fluxes of Ar$^{+}$ ion and thermal neutrons is compared. It is shown that the nature of damage to the structure is associated with both the specifics of the synthesis/processing of the material and the features of the interaction between the substance and ions (atomic collisions) and neutrons (collisions with atomic nuclei).