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Comparative photoluminescent analysis of point defects in SiO$_{2}$ induced by implantation of Ar$^{+}$ ions and neutron irradiation
I. P. Shcherbakov, A. E. Chmel Ioffe Institute, St. Petersburg
Abstract:
The introduction of Si$^{+}$ ions and ions of other elements into amorphous silicon dioxide during their interaction causes damage to the structural bonds, which is observed in the vibrational spectral bands. Pure SiO$_{2}$ has no optical transitions but the bands of induced point defects appear in the photoluminescence spectrum when ions/neutrons are introduced. The generation of photoluminescence-active defects by fluxes of Ar$^{+}$ ion and thermal neutrons is compared. It is shown that the nature of damage to the structure is associated with both the specifics of the synthesis/processing of the material and the features of the interaction between the substance and ions (atomic collisions) and neutrons (collisions with atomic nuclei).
Received: 27.11.2018 Revised: 27.11.2018 Accepted: 04.12.2018
Citation:
I. P. Shcherbakov, A. E. Chmel, “Comparative photoluminescent analysis of point defects in SiO$_{2}$ induced by implantation of Ar$^{+}$ ions and neutron irradiation”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:5 (2019), 24–26; Tech. Phys. Lett., 45:3 (2019), 208–210
Linking options:
https://www.mathnet.ru/eng/pjtf5511 https://www.mathnet.ru/eng/pjtf/v45/i5/p24
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Abstract page: | 38 | Full-text PDF : | 8 |
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