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Ohmic contacts to europium oxide for spintronic devices
A. A. Andreev, Yu. V. Grishchenko, I. A. Chernykh, M. L. Zanaveskin, È. F. Lobanovich National Research Centre "Kurchatov Institute", Moscow
Abstract:
A technique for in situ fabrication of aluminum-based Ohmic contacts to EuO by molecular-beam epitaxy is proposed. These contacts have a linear current–voltage curve and a contact resistance of 0.55 $\Omega$ mm and are stable in air. This suggests that the proposed technique holds promise for spintronic applications.
Received: 19.12.2018 Revised: 15.01.2019 Accepted: 15.01.2019
Citation:
A. A. Andreev, Yu. V. Grishchenko, I. A. Chernykh, M. L. Zanaveskin, È. F. Lobanovich, “Ohmic contacts to europium oxide for spintronic devices”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:7 (2019), 38–40; Tech. Phys. Lett., 45:4 (2019), 345–347
Linking options:
https://www.mathnet.ru/eng/pjtf5481 https://www.mathnet.ru/eng/pjtf/v45/i7/p38
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Abstract page: | 30 | Full-text PDF : | 4 |
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