|
Features of pulsed laser annealing of ВС$_{3}$ films on sapphire substrate
V. Yu. Fominskiya, R. I. Romanova, A. Solovieva, I. S. Vasil'evskiia, D. A. Safonova, A. A. Ivanova, P. V. Zininb, V. P. Filonenkoc a National Engineering Physics Institute "MEPhI", Moscow
b Scientific and Technological Centre of Unique Instrumentation, Russian Academy of Sciences
c Institute for High Pressure Physics, Russian Academy of Sciences
Abstract:
The morphology, chemical composition, microstructure and electrical properties of ВС$_{3}$ thin films subjected to melting by a nanosecond laser pulse were investigated. The original films were formed by pulsed laser co-deposition of B and C on a sapphire substrate at 150 and 350$^{\circ}$C. Morphological changes in the films depended on their initial structure. However, the structure “frozen” after irradiation in both films was attributed to the B-saturated graphite-like phase, the local composition of which varied due to the formation of inclusions of amorphous boron carbide. Before and after irradiation, the films showed a weakly decreasing dependence of the sheet resistance with increasing temperature from 4.2 to 330 K. After pulsed laser irradiation, the sheet resistance of the films decreased by $\sim$2.6 times.
Received: 01.02.2019 Revised: 01.02.2019 Accepted: 13.02.2019
Citation:
V. Yu. Fominskiy, R. I. Romanov, A. Soloviev, I. S. Vasil'evskii, D. A. Safonov, A. A. Ivanov, P. V. Zinin, V. P. Filonenko, “Features of pulsed laser annealing of ВС$_{3}$ films on sapphire substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:9 (2019), 26–29; Tech. Phys. Lett., 45:5 (2019), 446–449
Linking options:
https://www.mathnet.ru/eng/pjtf5449 https://www.mathnet.ru/eng/pjtf/v45/i9/p26
|
Statistics & downloads: |
Abstract page: | 47 | Full-text PDF : | 12 |
|