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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 45, Issue 10, Pages 9–12
DOI: https://doi.org/10.21883/PJTF.2019.10.47748.17478
(Mi pjtf5430)
 

Intraband radiation absorption by free holes in GaAs/InGaAs quantum wells with taking into account non-sphericity of $kP$ hamiltonian

N. V. Pavlov, G. G. Zegrya

Ioffe Institute, St. Petersburg
Abstract: The system of Kane equations is derived and solved with taking into account the elastic stresses and the nonsphericity of the $kP$ Hamiltonian. Analytical expressions for the energy spectra of charge carriers are obtained. The radiation absorption coefficient by heavy holes with transition to the spin-split zone in GaAs/InGaAs quantum wells was calculated for different directions of polarization of the incident radiation. It was shown that for the GaAs/InGaAs heterostructure, the maximum absorption will be observed when the QW width is 4–6 nm.
Funding agency Grant number
Russian Foundation for Basic Research 17-32-50145
Received: 26.07.2018
Revised: 18.02.2019
Accepted: 22.02.2019
English version:
Technical Physics Letters, 2019, Volume 45, Issue 5, Pages 481–484
DOI: https://doi.org/10.1134/S1063785019050274
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. V. Pavlov, G. G. Zegrya, “Intraband radiation absorption by free holes in GaAs/InGaAs quantum wells with taking into account non-sphericity of $kP$ hamiltonian”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:10 (2019), 9–12; Tech. Phys. Lett., 45:5 (2019), 481–484
Citation in format AMSBIB
\Bibitem{PavZeg19}
\by N.~V.~Pavlov, G.~G.~Zegrya
\paper Intraband radiation absorption by free holes in GaAs/InGaAs quantum wells with taking into account non-sphericity of $kP$ hamiltonian
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 45
\issue 10
\pages 9--12
\mathnet{http://mi.mathnet.ru/pjtf5430}
\crossref{https://doi.org/10.21883/PJTF.2019.10.47748.17478}
\elib{https://elibrary.ru/item.asp?id=39133960}
\transl
\jour Tech. Phys. Lett.
\yr 2019
\vol 45
\issue 5
\pages 481--484
\crossref{https://doi.org/10.1134/S1063785019050274}
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