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Intraband radiation absorption by free holes in GaAs/InGaAs quantum wells with taking into account non-sphericity of $kP$ hamiltonian
N. V. Pavlov, G. G. Zegrya Ioffe Institute, St. Petersburg
Abstract:
The system of Kane equations is derived and solved with taking into account the elastic stresses and the nonsphericity of the $kP$ Hamiltonian. Analytical expressions for the energy spectra of charge carriers are obtained. The radiation absorption coefficient by heavy holes with transition to the spin-split zone in GaAs/InGaAs quantum wells was calculated for different directions of polarization of the incident radiation. It was shown that for the GaAs/InGaAs heterostructure, the maximum absorption will be observed when the QW width is 4–6 nm.
Received: 26.07.2018 Revised: 18.02.2019 Accepted: 22.02.2019
Citation:
N. V. Pavlov, G. G. Zegrya, “Intraband radiation absorption by free holes in GaAs/InGaAs quantum wells with taking into account non-sphericity of $kP$ hamiltonian”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:10 (2019), 9–12; Tech. Phys. Lett., 45:5 (2019), 481–484
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https://www.mathnet.ru/eng/pjtf5430 https://www.mathnet.ru/eng/pjtf/v45/i10/p9
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Abstract page: | 41 | Full-text PDF : | 19 |
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