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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 45, Issue 11, Pages 6–8
DOI: https://doi.org/10.21883/PJTF.2019.11.47814.17607 (Mi pjtf5414) 		 
This article is cited in 4 scientific papers (total in 4 papers)

Mechanisms of frequency-dependent conductivity of mesoporous silicon at $\gamma$ irradiation with small doses

V. V. Galushkaa, A. E. Zharkovaa, D. V. Terinab, V. I. Sidorova, E. I. Khasinaa

a Saratov State University
b Yuri Gagarin State Technical University of Saratov
Full-text PDF (112 kB) Citations (4)
DOI: https://doi.org/10.21883/PJTF.2019.11.47814.17607
Abstract: The effect of low-dose $\gamma$ radiation on the mechanisms of low-frequency conductivity of mesoporous silicon has been studied. It has been shown that $\gamma$ irradiation preserves the hopping character of conductivity at a change of the frequency of phonon lattice vibrations, a decrease in the size of the hop, and a shift of the level of the capture of traps to the Fermi level in the band gap, which makes the structure with mesoporous silicon irradiated by $\gamma$ radiation promising for the creation of multifunctional resistive and capacitive devices.
Keywords: mesoporous silicon, $\gamma$ irradiation, hopping conductivity, phonon frequency, lattice vibrations.
Funding agency Grant number
Russian Foundation for Basic Research 18-07-00752а
Received: 26.11.2018
Revised: 06.03.2019
Accepted: 07.03.2019
English version:
Technical Physics Letters, 2019, Volume 45, Issue 6, Pages 533–536
DOI: https://doi.org/10.1134/S1063785019060063
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. V. Galushka, A. E. Zharkova, D. V. Terin, V. I. Sidorov, E. I. Khasina, “Mechanisms of frequency-dependent conductivity of mesoporous silicon at $\gamma$ irradiation with small doses”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019), 6–8; Tech. Phys. Lett., 45:6 (2019), 533–536
Citation in format AMSBIB
\Bibitem{GalZhaTer19}
\by V.~V.~Galushka, A.~E.~Zharkova, D.~V.~Terin, V.~I.~Sidorov, E.~I.~Khasina
\paper Mechanisms of frequency-dependent conductivity of mesoporous silicon at $\gamma$ irradiation with small doses
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 45
\issue 11
\pages 6--8
\mathnet{http://mi.mathnet.ru/pjtf5414}
\crossref{https://doi.org/10.21883/PJTF.2019.11.47814.17607}
\elib{https://elibrary.ru/item.asp?id=41131029}
\transl
\jour Tech. Phys. Lett.
\yr 2019
\vol 45
\issue 6
\pages 533--536
\crossref{https://doi.org/10.1134/S1063785019060063}
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    • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
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