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This article is cited in 1 scientific paper (total in 1 paper)
Photoselectivity of optical sensors based on transition metal dichalcogenides: the effect of thickness on their spectral characteristics
A. Yu. Avdizhiyan, S. D. Lavrov, A. V. Kudryavtsev, A. P. Shestakova, M. V. Vasina MIREA — Russian Technological University, Moscow
Abstract:
Prototype field-effect transistors based on solid solutions of transition metal dichalcogenides (TMDs) have been manufactured, and their spectral characteristics were studied using the photocurrent spectroscopy technique. Results of theoretical estimation of the total optical absorbance of two-dimensional (2D) TMD-based semiconductors of various thicknesses are presented as dependent on the light wavelength with allowance for the multiray interference. It is established that the interference effect significantly contributes to the resulting shapes of spectral characteristics of these optical sensors with variable thickness of TMD-based photosensitive layers.
Keywords:
two-dimensional semiconductors, spectroscopy, transition metal dichalcogenides, linear optics.
Received: 07.03.2019 Revised: 20.03.2019 Accepted: 20.03.2019
Citation:
A. Yu. Avdizhiyan, S. D. Lavrov, A. V. Kudryavtsev, A. P. Shestakova, M. V. Vasina, “Photoselectivity of optical sensors based on transition metal dichalcogenides: the effect of thickness on their spectral characteristics”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:12 (2019), 42–44; Tech. Phys. Lett., 45:6 (2019), 625–627
Linking options:
https://www.mathnet.ru/eng/pjtf5409 https://www.mathnet.ru/eng/pjtf/v45/i12/p42
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