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Stress relaxation in CrSi$_{2}$ crystals grown in weightlessness conditions from the melt Zn of the Cr–Si–Zn system
E. V. Kalashnikov, V. N. Gurin, S. P. Nikanorov, M. A. Yagovkina, L. I. Derkachenko Ioffe Institute, St. Petersburg
Abstract:
Experimental data and their analysis on the study of CrSi$_{2}$ microcrystals grown in weightlessness from the melt Zn of Cr–Si–Zn system by mass crystallization and placed in earth conditions are presented. New properties of such crystals are found.
Keywords:
crystallization, microgravity, crystal structure, relaxation, excess stress, defects, lattice constants.
Received: 05.03.2019 Revised: 03.04.2019 Accepted: 03.04.2019
Citation:
E. V. Kalashnikov, V. N. Gurin, S. P. Nikanorov, M. A. Yagovkina, L. I. Derkachenko, “Stress relaxation in CrSi$_{2}$ crystals grown in weightlessness conditions from the melt Zn of the Cr–Si–Zn system”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:13 (2019), 52–54; Tech. Phys. Lett., 45:7 (2019), 687–689
Linking options:
https://www.mathnet.ru/eng/pjtf5397 https://www.mathnet.ru/eng/pjtf/v45/i13/p52
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