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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 45, Issue 16, Pages 37–40
DOI: https://doi.org/10.21883/PJTF.2019.16.48155.17870 (Mi pjtf5350) 		 
The influence of EL2 centers on the photoelectric response of an array of radial GaAs/AlGaAs nanowires

N. R. Grigor'evaa, I. V. Shtromab, R. V. Grigor'eva, I. P. Soshnikovbcd, R. R. Reznike, Yu. B. Samsonenkob, N. V. Sibirevae, G. E. Cirlincf

a Saint Petersburg State University
b Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
c Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
d Ioffe Institute, St. Petersburg
e St. Petersburg National Research University of Information Technologies, Mechanics and Optics
f Saint Petersburg Electrotechnical University "LETI"
Full-text PDF (125 kB)
DOI: https://doi.org/10.21883/PJTF.2019.16.48155.17870
Abstract: We have studied the role of EL2 centers in formation of the photoelectric response of an array of radial $n$-type GaAs/Al$_{x}$Ga$_{1-x}$As ($x$ = 0.3) nanowires (NWs) grown by molecular beam epitaxy on a $p$-type silicon substrate. Results revealed a significant decrease in the time of NW photoresponse recovery as compared to that in a bulk crystal upon the transition of EL2 centers from a metastable nonactive state to the normal ground state.
Keywords: molecular beam epitaxy, semiconductors, nanowires, photoelectric properties, defects, gallium arsenide, silicon.
Funding agency Grant number
Russian Science Foundation 18-72-10047
This work was supported in part by the Russian Science Foundation, project no. 18-72-10047.
Received: 07.05.2019
Revised: 07.05.2019
Accepted: 13.05.2019
English version:
Technical Physics Letters, 2019, Volume 45, Issue 8, Pages 835–838
DOI: https://doi.org/10.1134/S1063785019080212
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. R. Grigor'eva, I. V. Shtrom, R. V. Grigor'ev, I. P. Soshnikov, R. R. Reznik, Yu. B. Samsonenko, N. V. Sibirev, G. E. Cirlin, “The influence of EL2 centers on the photoelectric response of an array of radial GaAs/AlGaAs nanowires”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:16 (2019), 37–40; Tech. Phys. Lett., 45:8 (2019), 835–838
Citation in format AMSBIB
\Bibitem{GriShtGri19}
\by N.~R.~Grigor'eva, I.~V.~Shtrom, R.~V.~Grigor'ev, I.~P.~Soshnikov, R.~R.~Reznik, Yu.~B.~Samsonenko, N.~V.~Sibirev, G.~E.~Cirlin
\paper The influence of EL2 centers on the photoelectric response of an array of radial GaAs/AlGaAs nanowires
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 45
\issue 16
\pages 37--40
\mathnet{http://mi.mathnet.ru/pjtf5350}
\crossref{https://doi.org/10.21883/PJTF.2019.16.48155.17870}
\elib{https://elibrary.ru/item.asp?id=41131229}
\transl
\jour Tech. Phys. Lett.
\yr 2019
\vol 45
\issue 8
\pages 835--838
\crossref{https://doi.org/10.1134/S1063785019080212}
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